PN4416 Allicdata Electronics
Allicdata Part #:

PN4416-ND

Manufacturer Part#:

PN4416

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V TO92
More Detail: RF Mosfet N-Channel JFET 400MHz TO-92-3
DataSheet: PN4416 datasheetPN4416 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: N-Channel JFET
Frequency: 400MHz
Gain: --
Current Rating: --
Noise Figure: 4dB
Power - Output: --
Voltage - Rated: 30V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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PN4416 is a kin of MOSFET (metal–oxide–semiconductor field-effect transistor). It uses metal–oxide–semiconductor structure which has four independent terminals, including source (S), gate (G), drain (D) and substrate (B). MOSFET operates using the same principle as metal–oxide–semiconductor capacitor. It is designed with a gate that can control the flow of current across the channel between drain and source terminals. The depletion layer at the interface between metal–oxide–semiconductor has a small resistance allowing large amounts of current to flow with a voltage change of just a few volts.

MOSFETs have several applications and can be used in high frequency, RF circuits. In RF applications, MOSFETs are used in amplifiers, frequency multipliers and direct-conversion transmitters.

PN4416 MOSFET is used in RF applications due to its low-cost, small size and high-frequency capability. It is suitable for a wide range of applications including switching, low-noise amplifiers, and power amplifiers. The device has an excellent operating frequency of up to 500 MHz and a low channel resistivity of just 0.3 ohms. It is also able to withstand very high power levels, up to 150W.

In order to use PN4416 MOSFET successfully it is important to understand how it operates. The device uses three primary components to operate: GATE, SOURCE, and DRAIN. When voltage is applied to the gate, it creates an electrical field between the gate and the drain. This field causes a depletion zone between the gate and the drain and results in a depletion region. This region is composed of many negatively charged particles, which builds up resistance and sinks the current.

When voltage is applied to the gate and the drain, the current begins to flow through the channel and the device switches on. As the voltage increases on the gate, the current also increases, and this increases the resistance of the device. This allows for better control of the output current. As the voltage on the gate increases, the current through the device decreases, which results in a steady output current.

The working principle of PN4416 is based on the voltage-controlled current source concept. This concept works on the basis of the gate voltage applied to the device and its output current relative to the electric filed between gate and drain. When the gate is connected to a positive voltage, the field will increase, allowing current to flow through the device. Conversely, when the gate is connected with a negative voltage, the electric field decreases, resulting in a decrease of the current.

PN4416 can be used in various high-frequency applications because of its low-cost, small size and high-frequency capability. Many applications are possible, such as frequency multipliers, high-frequency amplifiers, and switching applications. In addition, the device is suitable for use in low-noise amplifiers, power amplifiers, and it can also be used for high power applications. Due to its large operating frequency and low channel resistivity, PN4416 is an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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