PN5138_D26Z Allicdata Electronics
Allicdata Part #:

PN5138_D26Z-ND

Manufacturer Part#:

PN5138_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 30V 500mA 625mW Thro...
DataSheet: PN5138_D26Z datasheetPN5138_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Description

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NXP\'s PN5138_D26Z transistors are single, bipolar, junction transistors (BJT) which are used in a variety of applications. In this article, we\'ll take a closer look at the features and applications of the PN5138_D26Z and discuss its working principle.

Features of PN5138_D26Z Transistors

PN5138_D26Z transistors have some unique features which make them suitable for various applications. Firstly, they have high breakdown voltage as well as a low saturation voltage and high current gain. Secondly, they offer excellent thermal cyclability and are highly resistant to thermal shock. Finally, they have excellent stability and uniformity over entire process and voltage ranges.

Applications of PN5138_D26Z Transistors

The PN5138_D26Z transistors are mainly used in power electronics applications, such as power management, switching power supplies, and AC motors. They are also used in communications and digital/analog signal applications as well as in switching mode amplifiers.

Working Principle of PN5138_D26Z Transistors

The PN5138_D26Z is a bipolar junction transistor which works in an N-type silicon base and features Collector, Base and Emitter terminals. It has a Base-Emitter junction and a Base-Collector junction, both of which are PN junctions. When a positive voltage is applied to the Base terminal, a large current flows between the Base and Emitter terminals, resulting in a small voltage drop between them. This small voltage drop, in turn, controls the current flowing between the Collector and Emitter terminals.

Furthermore, the PN5138_D26Z transistors feature an initial Gate formation and an Electronic Switching Contacts (ESC), which can be used for Gate control. The initial Gate formation ensures that the transistor is activated correctly by creating a stable, low- leakage state. The ESC feature allows for fast on/off switching and reliable operation of the PN5138_D26Z even under harsh conditions.

Conclusion

In conclusion, NXP\'s PN5138_D26Z transistors are single, bipolar, junction transistors which are used in a variety of power electronics applications. They feature high breakdown voltage, low saturation voltage and high current gain, as well as excellent thermal cyclability and thermal shock resistance. The PN5138_D26Z also features initial Gate formation and Electronic Switching Contacts which can be used for Gate control.

The specific data is subject to PDF, and the above content is for reference

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