PN5133

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	18V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 100µA, 1mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 1mA, 5V
Power - Max:	625mW
Frequency - Transition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Short Body
Supplier Device Package:	TO-92S

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PN5133 Application Field and Working Principle

PN5133 is a type of bipolar junction transistor (BJT). It is a single, NPN, silicon epitaxial transistor with excellent HFE linearity, and is designed for a wide range of application fields. There are three terminals in a PN5133 transistor, an emitter, a collector, and a base. This transistor can be used in amplifying, switching and Small Signal amplifier applications. The PN5133 provides superior high frequency performance, high unity gain frequency, and low noise figure.

How Does PN5133 Work?

A PN5133 transistor works based on the principle of amplification. When a small current is applied at the base of the transistor, then, depending on the saturation level of the transistor, the current at the collector terminal is amplified. In other words, the base current controls the Collector-Emitter current.The transistor has three main regions or layers. The first is the base layer. It carries the electrical current from the collector side to the emitter side of the transistor. The second layer is the Emitter, which carries electrical current from the base to the collector, and the third layer is the Collector, which carries the electrical current from the emitter to the base.The PN5133 transistor is basically an NPN type of BJT, which means that the leakage current from the collector to the base is much lower than the leakage current from the base to the emitter. This is possible because the base layer of this transistor is slightly doped with a few electrons, while the emitter and collector are heavily doped.

Application Field of PN5133

PN5133 transistors can be used in various applications. One of the most common applications of this device is as an amplifier. It can be used to amplify signals, to boost strength at various frequencies, or to drive a loudspeaker.Other common uses of this transistor include switching applications, DC/DC converter operations, switching control systems, power supply management circuits, RF amplifiers, and small signal amplifiers.

Advantages of PN5133

PN5133 transistors offer several advantages over other types of transistors. It has a relatively high voltage breakdown, high amplification factor (HFE), and low noise figure. It also has a high unity gain frequency and favourable temperature characteristics. PN5133 transistors also have a high collector current rating and low collector-emitter leakage current, making the transistor ideal for use in small signal applications.These advantages make PN5133 transistors suitable for a variety of applications, from small signal amplification to high frequency switching devices.

Conclusion

PN5133 transistors are versatile devices, suitable for a wide range of applications. They offer several advantages, including high amplification factor, high unity gain frequency, and low noise figure. This device can be used for amplifying, switching, and for small signal amplifiers. It is a single, NPN, silicon epitaxial transistor, with excellent HFE linearity. PN5133 transistors offer a reliable and cost-effective solution for a wide range of applications, making it an excellent choice for high frequency circuitry.

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