PN5179_D26Z

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The PN5179_D26Z is part of the PN5179 family of products from Panasonic. This family includes ultra-low-noise, high-voltage RF transistors. The PN5179_D26Z is a high-power NPN silicon RF transistor which is highly suitable for broadband power amplifier applications in RF communication systems operating in the frequency range from 1 MHz to 6 GHz. It has high breakdown voltage, high gain, and excellent thermal stability.

The PN5179_D26Z is built with an optimized epitaxial structure and is designed to meet the necessary requirements of the output stages in multi-band, high-power amplifiers. It has a dual-gate design which provides good linearity over the entire frequency range, low thermal resistance, and excellent thermal stability. It also features a high voltage capability up to 5 V, a low noise figure with 5 dB at 1 GHz, and a high linearity with a gain of 30 dB at 2 GHz.

The PN5179_D26Z is ideally suited for use in TV broadcast systems, radio broadcast systems, and military radar systems. It is particularly suitable for high-power broadband amplifiers, and the low noise figure makes it well-suited for low-noise amplifiers. It is also ideal for applications where low-power consumption, high linearity, and high gain are required.

The working principle of the PN5179_D26Z is based on the NPN bipolar junction transistor. It has an emitter region which is heavily doped, a base which is lightly doped, and a heavily doped collector. The base-emitter junction forms a diode junction and allows electrons to flow from the emitter to the base. The collector-base junction also forms a diode junction and allows electrons to flow from the collector to the base. This creates an electric potential between the emitter and collector which causes electrons to flow through the base region.

The PN5179_D26Z has a three-terminal configuration which is commonly referred to as a “triode”. The base is connected to the control terminal and is used to vary the current flowing from the emitter to the collector. An input voltage is applied to the control terminal, and this voltage will vary the width of the base-emitter junction and adjust the flow of electrons from the emitter to the collector. This, in turn, will vary the current flow and output power.

The PN5179_D26Z is a high-performance, high-power RF bipolar transistor which is ideal for use in RF communication systems. Its optimized epitaxial structure and dual-gate design provide excellent linearity over a wide frequency range. The low noise figure and high-voltage capability make it suitable for low-noise amplifiers and high-power output stages. It is an ideal choice for multi-band applications, and its low-power consumption makes it an excellent choice for applications where low-power consumption is required.

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