Allicdata Part #: | PN5179FS-ND |
Manufacturer Part#: |
PN5179 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR RF NPN 12V TO-92 |
More Detail: | RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole... |
DataSheet: | PN5179 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 2GHz |
Noise Figure (dB Typ @ f): | 5dB @ 200MHz |
Gain: | 15dB |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5179 |
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PN5179 is a transistor type of Bipolar (BJT) and is part of the RF family. It has a wide range of applications, from automotive to industrial and from consumer electronics to radio telecommunications. PN5179 can operate at frequencies up to 5GHz and under an operating voltage as low as 1.7V. It is designed with a built-in ESD discharge circuit and is fully compliant with IEC 61000-4-2 International EMC standards.
PN5179 is used for voltage amplifiers, oscillators, mixers, and mixers/multipliers. It can also be used for antenna preamplifiers, low noise preamplifiers, and RF filters. In addition, PN5179 can be used for power amplifiers, radio receivers, and radio transmitters.
The working principle of PN5179 is based on its unique circuit structure. It is a three-terminal device with a collectors (C), base (B) and emitters (E). In its standard arrangement, the collector (C) and base (B) comprise the main circuit and the emitter (E) acts as the output. The collector (C) and emitter (E) is the controlling lead while the base (B) controls the amount of current going through the transistor. In its main application, the current flow between the collector (C) and emitter (E) is modulated by the base (B) voltage. This is because variations in the base (B) voltage control the width of the base-emitter junction, which affects the amount of current flow.
When the base (B) voltage is high, a large amount of current flows between the collector (C) and the emitter (E). When the base (B) voltage is low, the amount of current flow is much smaller. This is an important feature of the PN5179 transistor and is the basis for the various applications for which it can be used. For example, in its use as an oscillator, the transistor is configured to have alternating high and low base (B) voltages. This causes the current to flow in an oscillatory manner, creating an oscillating signal.
In addition to its wide range of applications, PN5179 also provides excellent stability, durability and reliability. The transistor is designed with an anti-saturation and isolator circuit, which helps to maintain a stable operation. The anti-saturation and isolator circuit also helps to reduce cross-talk interference and unwanted emissions. Furthermore, the emitter (E) is designed to provide a high isolation between the collector (C) and the base (B). This helps to reduce thermal runaway and provide a high level of stability and reliability, even under extreme conditions.
PN5179 is an excellent transistor for a wide range of applications, from communications to consumer electronics. Its wide range of applications and excellent stability and reliability make it the ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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