Allicdata Part #: | PN5179_D75Z-ND |
Manufacturer Part#: |
PN5179_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS RF NPN 12V 50MA TO-92 |
More Detail: | RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole... |
DataSheet: | PN5179_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 2GHz |
Noise Figure (dB Typ @ f): | 5dB @ 200MHz |
Gain: | 15dB |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5179 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PN5179_D75Z is a type of Bipolar Junction Transistor (BJT) device specifically designed for radio frequency (RF) applications. It is a low dead-space, high-frequency type NPN transistor. The device features high voltage performance and low total harmonic distortion, thus making it the ideal choice for high-performance power amplifier applications operating at frequency bands up to 3 GHz. The PN5179_D75Z utilizes an advanced NPN planar process which helps it achieve high gain, efficiency and power. This advanced process also helps the device to achieve a higher order of linearity and low noise figure, as well as increased gain, linearity and wide bandwidth performance over wide frequency ranges. The PN5179_D75Z is also designed to provide excellent thermal performance, enabling the device to operate at higher power levels and over a wide temperature range. This feature allows the device to be used in a variety of RF applications, including high-performance power amplifiers and RF/microwave applications. The working principle of PN5179_D75Z can be understood by looking at its three primary components, namely, the Emitter, Base and Collector. The Emitter acts as a source of holes, the Base acts as a control electrode, and the Collector acts as a drain of carriers or a current sink.As an NPN transistor, PN5179_D75Z works by allowing electrons to flow through the Base-Emitter junction when the Base voltage is positive with respect to the Emitter voltage. This flow of electrons is regulated by the Base current, which in turn is controlled by an external bias current. The Collector-Base junction acts as a diode and mainly works for providing negative feedback for controlling the current gain of the transistor. When the transistor is turned on, the electrons from the Emitter will enter the Base region. This will then cause a depletion region to form near the Base-Emitter junction, creating a very narrow but effective barrier to the current. As the electrons enter the Collector-Base junction, they will also compete with the electrical field generated by the Base current. This competition will result in the transistor gaining an amount of current gain, which is determined by the junction capacitance along with the resistor values connected to the Base. Once the electrons reach the Collector, they will move to the external circuit. The transistor’s current gain will be determined by the ratio of the current at the Collector to the current at the Base. This current gain is known as the Beta of the PN5179_D75Z. In summary, the PN5179_D75Z is an ideal choice for high-performance power amplifier applications working at frequency bands up to 3 GHz. This type of transistor is specially designed to provide excellent thermal performance, high voltage performance and low total harmonic distortion. Additionally, its advanced NPN planar process enables it to achieve high gain, efficiency and power, as well as increased gain, linearity and wide bandwidth performance over wide frequency ranges.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "PN51" Included word is 40
Part Number | Manufacturer | Price | Quantity | Description |
---|
PN5133 | ON Semicondu... | 0.0 $ | 1000 | NPN LL AMP TRANSISTOR TO9... |
PN5134 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 10V 0.5A TO-92B... |
PN5135 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 0.2A TO92Bi... |
PN5138 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 30V 0.5A TO-92B... |
PN5139 | ON Semicondu... | 0.0 $ | 1000 | PNP SS GP AMP TRANSISTOR ... |
PN5142 | ON Semicondu... | 0.0 $ | 1000 | PNP SS GP AMP TRANSISTOR ... |
PN5138_D26Z | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 30V 0.5A TO-92B... |
PN5138_D75Z | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 30V 0.5A TO-92B... |
PN5179 | ON Semicondu... | -- | 1000 | TRANSISTOR RF NPN 12V TO-... |
PN5179_D26Z | ON Semicondu... | 0.0 $ | 1000 | TRANS RF NPN 12V 50MA TO-... |
PN5179_D27Z | ON Semicondu... | 0.0 $ | 1000 | TRANS RF NPN 12V 50MA TO-... |
PN5179_D75Z | ON Semicondu... | 0.0 $ | 1000 | TRANS RF NPN 12V 50MA TO-... |
RSF1WSJT-PN510K | Yageo | 0.02 $ | 1000 | RES METAL OXIDE 1W 5% AXI... |
RSF1WSJT-PN510R | Yageo | 0.02 $ | 1000 | RES METAL OXIDE 1W 5% AXI... |
RSF1WSJT-PN51K | Yageo | 0.02 $ | 1000 | RES METAL OXIDE 1W 5% AXI... |
RSF1WSJT-PN51R | Yageo | 0.02 $ | 1000 | RES METAL OXIDE 1W 5% AXI... |
CFR-25JR-PN510K | Yageo | 0.01 $ | 1000 | RES 5% 1/4W AXIAL510 kOhm... |
CFR-25JR-PN510R | Yageo | 0.01 $ | 1000 | RES 5% 1/4W AXIAL510 Ohms... |
CFR-25JR-PN51K | Yageo | 0.01 $ | 1000 | RES 5% 1/4W AXIAL51 kOhms... |
CFR-25JR-PN51R | Yageo | 0.01 $ | 1000 | RES 5% 1/4W AXIAL51 Ohms ... |
PN5180A0ET/C1J | NXP USA Inc | 2.79 $ | 4000 | IC RFID TAG 13.56MHZ 64TF... |
PN5120A0HN1/C2,118 | NXP USA Inc | 2.04 $ | 1000 | IC TRANSMISSION MOD 32-HV... |
PN5120A0HN1/C2,151 | NXP USA Inc | 4.48 $ | 3006 | IC TRANSMISSION MOD 32-HV... |
PN5120A0HN1/C2,157 | NXP USA Inc | 4.48 $ | 2444 | IC TRANSMISSION MOD 32-HV... |
PN5180A0HN/C3E | NXP USA Inc | 4.98 $ | 2378 | HIGH-PERFORMANCE MULTI-PR... |
PN5120A0HN1/C1,151 | NXP USA Inc | 4.48 $ | 126 | IC TRANSMISSION MOD 32-HV... |
PN5180A0ET/C3J | NXP USA Inc | 2.79 $ | 8000 | HIGH-PERFORMANCE MULTI-PR... |
PN5180A0HN/C3Y | NXP USA Inc | 2.79 $ | 4000 | HIGH-PERFORMANCE MULTI-PR... |
PN5120A0HN/C2,551 | NXP USA Inc | 4.48 $ | 5390 | IC TRANSMISSION MOD 40-HV... |
PN5120A0HN/C2,557 | NXP USA Inc | 4.48 $ | 2450 | IC TRANSMISSION MOD 40-HV... |
PN5120A0HN1/C1,118 | NXP USA Inc | 2.04 $ | 1000 | IC TRANSMISSION MOD 32-HV... |
PN5180A0HN/C2E | NXP USA Inc | -- | 462 | HIGH-PERFORMANCE MULTI-PR... |
PN5180A0ET/C3QL | NXP USA Inc | 4.98 $ | 419 | HIGH-PERFORMANCE MULTI-PR... |
PN5180A0HN/C1Y | NXP USA Inc | 2.79 $ | 1000 | PN5180A0HN/HVQFN40//C1/RE... |
PN5120A0HN1/C1,157 | NXP USA Inc | 2.13 $ | 1000 | IC TRANSMISSION MOD 32-HV... |
PN5120A0ET/C2EL | NXP USA Inc | 2.13 $ | 1000 | IC TRANSMISSION MOD 64TFB... |
PN5120A0ET/C2J | NXP USA Inc | 2.13 $ | 1000 | IC TRANSMISSION MOD 64TFB... |
PN512AA0HN1/C2,518 | NXP USA Inc | 2.35 $ | 1000 | IC TXRX NFC COMPLIANT 32H... |
PN5180A0ET/C2J | NXP USA Inc | 2.79 $ | 1000 | HIGH-PERFORMANCE MULTI-PR... |
PN5180A0HN/C2Y | NXP USA Inc | 2.79 $ | 1000 | HIGH-PERFORMANCE MULTI-PR... |
Latest Products
BFR94AW,115
TRANS NPN 5GHZ SOT323RF Transistor NPN 1...
BFR93AW,135
TRANS NPN 12V 35MA 5GHZ SOT323RF Transis...
BFU725F,115
TRANS NPN 20GHZ SOT343FRF Transistor NPN...
MBC13900NT1
TRANS RF NPN LO NOISE SOT-343RF Transist...
BLS3135-65,114
TRANSISTOR RF POWER SOT422ARF Transistor...
BLS3135-50,114
TRANSISTOR RF POWER SOT422ARF Transistor...