PN5179_D75Z Allicdata Electronics
Allicdata Part #:

PN5179_D75Z-ND

Manufacturer Part#:

PN5179_D75Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS RF NPN 12V 50MA TO-92
More Detail: RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole...
DataSheet: PN5179_D75Z datasheetPN5179_D75Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5179
Description

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PN5179_D75Z is a type of Bipolar Junction Transistor (BJT) device specifically designed for radio frequency (RF) applications. It is a low dead-space, high-frequency type NPN transistor. The device features high voltage performance and low total harmonic distortion, thus making it the ideal choice for high-performance power amplifier applications operating at frequency bands up to 3 GHz. The PN5179_D75Z utilizes an advanced NPN planar process which helps it achieve high gain, efficiency and power. This advanced process also helps the device to achieve a higher order of linearity and low noise figure, as well as increased gain, linearity and wide bandwidth performance over wide frequency ranges. The PN5179_D75Z is also designed to provide excellent thermal performance, enabling the device to operate at higher power levels and over a wide temperature range. This feature allows the device to be used in a variety of RF applications, including high-performance power amplifiers and RF/microwave applications. The working principle of PN5179_D75Z can be understood by looking at its three primary components, namely, the Emitter, Base and Collector. The Emitter acts as a source of holes, the Base acts as a control electrode, and the Collector acts as a drain of carriers or a current sink.As an NPN transistor, PN5179_D75Z works by allowing electrons to flow through the Base-Emitter junction when the Base voltage is positive with respect to the Emitter voltage. This flow of electrons is regulated by the Base current, which in turn is controlled by an external bias current. The Collector-Base junction acts as a diode and mainly works for providing negative feedback for controlling the current gain of the transistor. When the transistor is turned on, the electrons from the Emitter will enter the Base region. This will then cause a depletion region to form near the Base-Emitter junction, creating a very narrow but effective barrier to the current. As the electrons enter the Collector-Base junction, they will also compete with the electrical field generated by the Base current. This competition will result in the transistor gaining an amount of current gain, which is determined by the junction capacitance along with the resistor values connected to the Base. Once the electrons reach the Collector, they will move to the external circuit. The transistor’s current gain will be determined by the ratio of the current at the Collector to the current at the Base. This current gain is known as the Beta of the PN5179_D75Z. In summary, the PN5179_D75Z is an ideal choice for high-performance power amplifier applications working at frequency bands up to 3 GHz. This type of transistor is specially designed to provide excellent thermal performance, high voltage performance and low total harmonic distortion. Additionally, its advanced NPN planar process enables it to achieve high gain, efficiency and power, as well as increased gain, linearity and wide bandwidth performance over wide frequency ranges.

The specific data is subject to PDF, and the above content is for reference

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