PN5135

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PN5135 is a type of bipolar junction transistor, or BJT. Commonly used in electronics, BJTs are three-terminal devices composed of two PN-junctions between three layers of semiconductor materials. The PN5135 is a single BJT, and is mainly used for a wide variety of high-frequency applications. It is particularly useful in power amplifiers and antenna circuits, due to its high current gain and wide band-gap voltage.

The three terminals of a BJT are the collector, the base, and the emitter. The collector and emitter are the current carriers, and the base is used to control the flow of current between collector and emitter. A common BJT configuration is that of an NPN device, which is a layer of N-type semiconductor material sandwiched between two layers of P-type semiconductor material. The electrons from the N-type layer can be pushed into the P-type layers. This allows current to flow from the collector to the emitter, when the base is positively biased.

The PN5135 BJT has a high voltage rating of 150V and a collector current rating of 10A. It has a high voltage gain, or hfe, of up to 200, and a high current gain, or HFE, of up to 400 which allows it to be used in high frequency applications. The PN5135 can be used in the design of amplifiers and RF circuits to amplify and amplify electrical signals, as well as in switching circuits to control current flow.

In order to use the PN5135, a suitable circuit must be designed which will allow proper biasing of the transistor. The collector of the PN5135 must be connected to a positive DC voltage, which will create a potential difference between the collector and base. This will cause a current to flow through the base-collector junction, which will be controlled by the applied voltage. The voltage on the base must be higher than the collector voltage to ensure that current can flow from the collector to the emitter when the transistor is turned on.

In order to control the current gain of the PN5135, the base-emitter voltage (VBE) must be adjusted. The value of VBE is dependent on the type of application for which the transistor is used. For example, for an amplifying application, VBE should be set to a value which will produce a higher current gain. For switching applications, VBE should be set to a value which will produce a lower current gain.

Once the VBE has been adjusted, the transistor can be used in the circuit. The PN5135 can be used with either N-type or P-type MOSFETs for high-frequency applications such as power amplifiers, antenna circuits, and switching circuits. In addition, the PN5135 is ideal for applications which require a high frequency response and high current gain.

In conclusion, the PN5135 is a single bipolar junction transistor (BJT) which is highly suitable for high-frequency applications. It has a high voltage rating of 150V and a current gain of up to 400. The PN5135 is ideal for applications such as power amplifiers, antenna circuits, and switching circuits. It is also extremely useful in controlling the current gain of a circuit, by adjusting the base-emitter voltage (VBE).

The specific data is subject to PDF, and the above content is for reference