Allicdata Part #: | PN5179_D27Z-ND |
Manufacturer Part#: |
PN5179_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS RF NPN 12V 50MA TO-92 |
More Detail: | RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole... |
DataSheet: | PN5179_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 2GHz |
Noise Figure (dB Typ @ f): | 5dB @ 200MHz |
Gain: | 15dB |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5179 |
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PN5179_D27Z belongs to a type of transistors called Bipolar Junction Transistor or BJT. It is primarily used in radio frequency circuits or RF circuits. In this article, we will discuss its primary application field and working principle.
The PN5179_D27Z is an epitaxial-base NPN transistor designed for use in low-noise and high-gain applications. It features a collector-base voltage of 55V with a collector current rating up to 1.2A. It also has an Hfe rating of 80-500 at 4.5V and a total capacitance of 2 pF max. Its maximum power dissipation is 3.2 Watts.
The PN5179_D27Z is widely used for RF applications such as audio amplifiers, oscillators, transmitters, and receivers. It is particularly suitable for low-noise and high-gain applications since it delivers excellent stability, frequency response, and excellent input and output matching. It also provides excellent thermal stability and excellent high frequency characteristics such as gain flatness and linearity.
The principle of operation of the PN5179_D27Z is the same as that of any other BJT. The transistor consists of three layers of semiconductor material, namely, the emitter, the base, and the collector. The emitter and the collector constitute the two terminals of the transistor. The base is sandwiched between the other two. Each terminal provides a path for current but only the base is a controlling element, where current is transferred from the emitter to the collector.
The operation of the PN5179_D27Z is based on the principle of the "hybrid-parameter" model. This model explains how a small current in the base controls a much larger current from the emitter to the collector. When a large bias voltage is applied between the emitter and the base, a small current is created in the base. This small current results in a corresponding large current between the emitter and the collector. This large current is controlled by the base, thus the name "hybrid-parameter".
The primary application field of the PN5179_D27Z is radio frequency circuits. It is used in a variety of applications such as amplifiers, receivers, transmitters, oscillators, and filters. It is also used in a wide range of applications, including telecommunications, computer communication, data communications, instrumentation, audio, video systems, and wireless communication.
In conclusion, PN5179_D27Z is a type of Bipolar Junction Transistor (BJT) used primarily in radio frequency circuits or RF circuits. Its primary application field is RF circuits, where it is used in a variety of applications such as amplifiers, receivers, transmitters, oscillators, and filters. It is based on the “hybrid-parameter” model, where the base current is used to control the collector current. This makes it particularly suitable for low-noise and high-gain applications.
The specific data is subject to PDF, and the above content is for reference
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