PRFX1K80HR5

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The PRFX1K80HR5 is a field effect transistor (FET) manufactured by a company specializing in the fabrication of high-frequency silicon devices. It is commonly used in applications such as radio-frequency amplifiers and oscillators. This device is a monolithic integrated circuit (IC) containing several functional blocks. It has a high input impedance, low output noise, and low power consumption, allowing it to operate efficiently in a wide range of applications.

One of the main characteristics of the PRFX1K80HR5 is its gate capacitance, referred to as its gate-source capacitance. This capacitance plays an important role in limiting the amount of current that can be applied to the device’s drain-source path. The PRFX1K80HR5’s gate-source capacitance is specified to be 15 pF. This figure is important for the proper operation of the device in applications such as voltage-controlled oscillators where the output frequency is dependent upon the device’s capacitance.

The PRFX1K80HR5 holds a number of other features that make it suitable for radio-frequency applications. It has a high frequency response with a 3dB point of around 1 GHz and a power gain of >14dB across the same frequency range. It is also capable of achieving a low input and output impedance, as well as a high input and output power, which is important for efficient operation. The device also has a reverse bias capability, allowing it to reject any unwanted input signals that may be present.

The PRFX1K80HR5 operates on the principle of field effect conduction, where electric current passing through the channel is controlled by a gate voltage applied to the transistor’s gate terminal. The field effect simply means that the current through the channel increases as the voltage on the gate terminal increases. This allows the device to be used as a voltage-controlled amplifier, oscillator, or other type of signal processing device in radio-frequency applications.

The PRFX1K80HR5 is a widely-used radio-frequency field effect transistor featuring high gain and bandwidth, low distortion, and reverse bias capabilities. Its gate-source capacitance makes it suitable for voltage-controlled oscillator applications and its other features make it suitable for a wide range of radio-frequency applications. This device is an ideal choice for applications such as high-frequency amplifiers, oscillators, and signal processing circuits.

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