PRMD16Z Allicdata Electronics
Allicdata Part #:

1727-7392-2-ND

Manufacturer Part#:

PRMD16Z

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PRMD16/SOT1268/DFN1412-6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: PRMD16Z datasheetPRMD16Z Datasheet/PDF
Quantity: 5000
5000 +: $ 0.03333
Stock 5000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Power - Max: 480mW
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1412-6
Description

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The PRMD16Z is a type of self-biasing transistor array, and it is an essential component in a variety of electronic systems. This transistor array is composed of sixteen pre-biased NPN transistors. Each of these transistors is readily capable of being employed as an amplifier, switch, timer, or regulator. It is an ideal device for applications that require a high-performance, low-power consumption, and small form-factor.

The PRMD16Z transistor array consists of five distinct metal layers, of which two are collector layers, two are base layers, and one is the emitter layer. The collector layers are the metal layers which carry the current away from the main substrate. The base layer acts as the center of the transistor array and is used to connect the collector and emitter layers. The emitter layer is the metal layer that provides a "grounding path" for the current to flow through. As the emitter is connected to the base, current is then able to pass through the collector layer as well.

The PRMD16Z transistor array\'s working principle is based on the principles of bipolar junction transistor (BJT). BJT’s use a semiconductor material as a base material, with the small current from the base control a large current from the collector to the emitter. At the same time, the width of the base terminal determines the resistance between the collector and emitter. This principle is applied to the PRMD16Z transistor array in order for accurate and controllable frequency response.

The PRMD16Z transistor array has a wide application field. It has a high-frequency response, low-noise level, and a wide operating temperature range, making it an ideal device for use in a variety of electronic systems. It is used in pulse-width modulation (PWM) applications, high-voltage DC motor control, analog motor control, and power supply balancing circuits. Additionally, it is a great choice for power amplifiers, automotive systems, as well as a variety of industrial and aviation applications.

The PRMD16Z is a power-efficient and reliable device that can easily be integrated in a variety of electronic systems. Its compact form-factor and wide operational temperature range make it a very versatile, cost-effective device. Its pre-biased design and high-performance, low-noise characteristics make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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