| Allicdata Part #: | 1727-7393-2-ND |
| Manufacturer Part#: |
PRMD2Z |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | PRMD2/SOT1268/DFN1412-6 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias... |
| DataSheet: | PRMD2Z Datasheet/PDF |
| Quantity: | 5000 |
| 5000 +: | $ 0.03333 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | 1 NPN Pre-Biased, 1 PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 22 kOhms |
| Resistor - Emitter Base (R2): | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max): | 1µA |
| Frequency - Transition: | 230MHz |
| Power - Max: | 480mW |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-XFDFN Exposed Pad |
| Supplier Device Package: | DFN1412-6 |
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The PRMD2Z is a pre-biased array transistor with bipolar junction technology (BJT). It is used in a wide range of applications where high performance, flexibility, and reliability are required. The PRMD2Z is a two-stage device which contains two transistors and two integrated gate protection elements.
PRMD2Z Applications Field
The PRMD2Z is designed for use in high performance and medium power applications ranging from small scale industrial, automotive and aerospace applications, to audio systems and medium power amplifiers. It is also ideal for use in signal conditioning and low level devices such as PC cards, interface circuits and power management. The PRMD2Z is especially suitable for applications requiring high speed switching, high voltage and current, long-term reliability, and ESD protection.
PRMD2Z Working Principle
The PRMD2Z has two stages consisting of two transistors with integrated gate protection elements. The first stage integrates two transistors, each with its own integrated gate protection element. The gate protection element helps prevent the effects of gate-induced turn-off, a major source of noise in high-voltage/high-current switches. The second stage contains two integrated more protective gate protection elements that provide better noise immunity. This stage is also highly-integrated, combining the control, drive and output stages.
This two-stage transistor array helps to ensure that the device has high reliability and consistent performance throughout its range of operations. The two transistors in the first stage are complementary and are connected in a cascode configuration, meaning that the transistors provide a stable voltage and current between the input and output. The second stage provides additional protection from noise and also has a low-power output stage.
The PRMD2Z also features a high-temperature junction, allowing it to be used in extreme environments. This is especially important for applications such as automotive and aerospace, where temperatures can approach and even exceed 200°C. The PRMD2Z also features built-in ESD protection, allowing it to work in hazardous environments.
Overall, the PRMD2Z is an excellent choice for a wide range of applications, providing excellent levels of performance and reliability. Its two-stage design helps ensure that it can perform reliably and consistently, while the built-in gate protection elements provide excellent noise immunity and the high-temperature junction allows the device to be used in extreme environments.
The specific data is subject to PDF, and the above content is for reference
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PRMD2Z Datasheet/PDF