PRMD3Z Allicdata Electronics
Allicdata Part #:

1727-7394-2-ND

Manufacturer Part#:

PRMD3Z

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PRMD3/SOT1268/DFN1412-6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: PRMD3Z datasheetPRMD3Z Datasheet/PDF
Quantity: 5000
5000 +: $ 0.03333
Stock 5000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Power - Max: 480mW
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1412-6
Description

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The PRMD3Z is a pre-biased transistor Array integrated circuit (IC) with three high-speed independent NPN transistors that are designed for use in both analog and digital circuit applications. This device is designed with a low-voltage drop, thermal derating and low input capacitance.

The PRMD3Z is a low-power consumption and high-speed NPN transistor array with three independent transistors installed in one IC package. This device is optimized for wide-range applications, offering low voltage drop, thermal derating and low input capacitance. This device is suitable for low voltage and low current applications, offering an improved temperature cycling range, low static power consumption and maximum power dissipation.

The working principle of the PRMD3Z is based upon the NPN transistor. Each transistor consists of three terminals, collector, base, and emitter, and a biasing network. The base and emitter terminals are the two active regions of the transistor.A bias voltage is applied to the base terminal and a current is injected from the collector terminal to the base. The current flow is modulated by the applied base voltage, thus controlling the flow of current from the collector terminal to the emitter terminal.

The PRMD3Z device utilizes a pre-biased transistor array, allowing the device to operate in an unbiased mode. Pre-biased transistors have an added feature that allows the user to adjust the bias voltage applied to the base terminal, allowing for different operating points. This device is especially useful for applications that require varying operating conditions, such as rapidly changing temperatures. The device has excellent thermal derating characteristics, allowing it to handle a wide temperature range.

The PRMD3Z is ideal for low voltage and low current applications, providing low static power consumption and maximum power dissipation. This device is also suitable for applications requiring wide frequency range, such as digital and analog signals. The low voltage drop and low input capacitance ensure the device is suitable for applications where the supply voltage is limited or current is low.

In summary, the PRMD3Z is a pre-biased transistor array IC specifically designed for use in both analog and digital circuit applications. This device is optimized for low voltage and low current applications, offering an improved temperature cycling range, low static power consumption and maximum power dissipation. The pre-biased array offers advantages such as adjustable bias voltage, allowing for different operating points. The device is ideal for applications requiring excellent thermal derating and wide frequency range.

The specific data is subject to PDF, and the above content is for reference

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