PTF080101M V1 Allicdata Electronics
Allicdata Part #:

PTF080101MV1-ND

Manufacturer Part#:

PTF080101M V1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC FET RF LDMOS 10W TSSOP-10
More Detail: RF Mosfet LDMOS 28V 180mA 960MHz 16dB 10W PG-RFP-1...
DataSheet: PTF080101M V1 datasheetPTF080101M V1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: GOLDMOS®
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: LDMOS
Frequency: 960MHz
Gain: 16dB
Voltage - Test: 28V
Current Rating: 1µA
Noise Figure: --
Current - Test: 180mA
Power - Output: 10W
Voltage - Rated: 65V
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: PG-RFP-10
Description

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The PTF080101M V1 is an n-channel depletion-mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for non-critical RF and low-noise amplifier applications. It is a cost effective component that offers excellent performance and reliable operation over a wide range of temperature and current conditions.

This MOSFET is built on a planar process technology and is packaged with an epoxy molded plastic type case and an electrically insulated flat lead frame. It is designed to operate with a supply voltage of up to 80V and a maximum gate-source voltage of 8V. It also has a maximum drain current of 20mA and a maximum drain-source voltage of 50V.

The PTF080101M V1 features an area-efficient design for cost effective performance and power consumption. It also has excellent stability, low input and gate capacitance, and high RF performance. The device is also RoHS compliant.

The PTF080101M V1 operates by having an n-type semiconductor channel that connects the drain terminal to the source terminal. A voltage applied to the gate terminal causes a depletion of electrons in the channel which in turn leads to current flow between the drain and source terminals. The gate voltage can thus be used to control the current flow between the drain and the source, thereby allowing it to be used in RF and low noise amplifiers.

The PTF080101M V1 is ideal for use in a wide range of RF and low noise amplifier applications. Its low impedance, low thermal resistance, and high RF performance make it a great choice for RF applications such as cellular base stations, GPS systems, and wireless LANs. It is also well-suited for low noise amplifiers such as pre-amplifiers, audio amplifiers, line drivers, and power amplifiers.

The PTF080101M V1 is cost effective, reliable, and easy to use in a variety of RF and low noise amplifier applications. It is also RoHS compliant and offers excellent performance and stable operation. Overall, the PTF080101M V1 is an excellent choice for a wide range of RF and low noise amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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