PTF080101S V1

Series:	GOLDMOS®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	960MHz
Gain:	18.5dB
Voltage - Test:	28V
Current Rating:	1µA
Noise Figure:	--
Current - Test:	150mA
Power - Output:	10W
Voltage - Rated:	65V
Package / Case:	H32259-2
Supplier Device Package:	H-32259-2

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PTF080101S V1 Application Field and Working PrincipleThe PTF080101S V1 is an advanced CMOS RF power switch. Its small size, low power consumption and excellent RF linearity make it well suited for portable wireless devices such as mobile phones and tablets.The PTF080101S V1 is a single-pole double-throw (SPDT) RF switch, capable of switching between two differential channels and two antennas. It is designed to enable the single antenna to be switchable between two different transmission frequencies, allowing seamless operation between the two channels. The switch also features an integrated amplifier that compensates for the variable insertion loss between the two inputs and provides a variable gain of up to 26 dB.PTF080101S V1 uses an integrated FET switch in its RF path, which is optimized to minimize insertion loss and ensure minimal switching time. The switch also includes a low noise amplifier (LNA) that provides up to 14 dB gain, contributing to improved signal-to-noise ratio (SNR).In addition to dual-band switching and wideband gain control, the PTF080101S V1 also features reverse isolation and dynamic control of output power. The dynamic control of output power is particularly beneficial in wireless terminals and is used to keep the transmitted signal within specified limits and to ensure stable communication quality.The PTF080101S V1 can be configured to support different switching schemes, allowing for complex system configurations. The switch is capable of handling up to 34 dBm of output power, enabling its use in a variety of wireless applications, such as handheld radios and wireless microphones.The PTF080101S V1 also features an integrated power management system, allowing for both low-noise and low-power operation. The power management system features both closed-loop and open-loop control that adjust the power output to optimize the system performance.When the integrated amplifier is used with the PTF080101S V1, the total gain of the switch increases up to 32dB. This enables improved noise rejection, improved signal-to-noise ratio, improved linearity and better spectral purity.In conclusion, the PTF080101S V1 is a highly integrated RF power switch that is optimized for use in portable electronics and wireless systems. The switch provides balanced operation, low insertion loss, low noise, wideband gain control and dynamic control of output power. The integrated amplifier and power management system provide improved SNR, linearity and better spectral purity. Together, these features make the PTF080101S V1 an ideal solution for a variety of mobile phone and tablet applications.

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