PTF210101M V1

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PTF210101M V1 is a transistor derived from field-effect technology. It is a type of n-channel and for radio frequency (RF) power applications, has an extended gate source voltage of 24V and an excellent maximum junction temperature of 150°C.

This transistor is available in a flat small-sized package, enabling engineers and technicians to easily integrate PTF210101M V1 into their design. It boasts a very low on-resistance of 0.017Ohm and a minimum off-state drain of 20V, giving it an optimal RDS(ON) and bottom voltage capability, making it suitable for high power applications such as transmitters, automotive systems and DC-DC converters.

The transistor works by using electrostatic effect, where the applied electric field can affect the electrical properties of a material, in this case, the transistor. When a voltage is connected between the gate and the source, electrical charges are generated, which determines the flow of electrons from the source to the drain. In other words, the voltage between the gate and source controls the drain-source current by affecting the channel’s impedance characteristics.

The PTF210101M V1 is an ideal transistor for designing high voltage, high power devices. Its enhanced power capacity and superior switching speed offers a wide range of potential applications. In addition, its excellent temperature stability makes it suitable for extended service in high temperature environments. The power level and operating temperature, combined with the extended voltage capability and stable on-resistance, provides designers with a reliable and versatile device suited for all types of applications.

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