PTF210451E V1 Allicdata Electronics
Allicdata Part #:

PTF210451EV1-ND

Manufacturer Part#:

PTF210451E V1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC FET RF LDMOS 45W H-30265-2
More Detail: RF Mosfet LDMOS 28V 500mA 2.17GHz 14dB 45W H-30265...
DataSheet: PTF210451E V1 datasheetPTF210451E V1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: GOLDMOS®
Packaging: Tray 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 2.17GHz
Gain: 14dB
Voltage - Test: 28V
Current Rating: 1µA
Noise Figure: --
Current - Test: 500mA
Power - Output: 45W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads
Supplier Device Package: H-30265-2
Description

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The PTF210451E V1 is a type of transistor, specifically classified as a Radio Frequency (RF) Field Effect Transistor (FET). FETs are a type of transistor which use electric fields instead of thermal energy to control the conductance of a semiconductor material. In the case of the PTF210451E V1, it is a Leadless, single-ended, limited-performance lateral MOSFET, designed for operation in High Frequency (i.e. Radio Frequency).

In terms of its application field, the PTF210451E V1 is intended for use in radio communication systems, particularly for operation in the frequency range of 40 to 600 MHz. This type of transistor is typically preferred in communication applications that require low noise, low distortion, and high linearity. The PTF210451E V1 provides such performance, due to its leadless shape, resulting in a lower Equivalent Series Inductance (ESL).

The working principle of the PTF210451E V1 is simple, but also quite effective. It is based on the principle of a FET, in that electric fields will control the flow of current through a semiconductor material. Essentially, the PTF210451E V1 uses an electric field generated by an input signal to control the conductivity of the semiconductor material, and thus the current which passes through it. This input signal can either be AC or DC and is generated either by an external control device or by the device itself.

The device is designed to function with both positive and negative voltages, so it is suitable for a wide range of applications and can be used in both linear and non-linear circuits. Such versatility makes the PTF210451E V1 an ideal choice for use in radio communication systems that require reliable and consistent performance.

Using this type of transistor, it is possible to achieve very low levels of noise and distortion, which can help to drastically improve the overall performance of a radio communication system. In addition, due to its leadless shape, this device has improved stability and better control over a wide range of temperatures.

The specific data is subject to PDF, and the above content is for reference

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