QH8KA1TCR Allicdata Electronics

QH8KA1TCR Discrete Semiconductor Products

Allicdata Part #:

QH8KA1TCRTR-ND

Manufacturer Part#:

QH8KA1TCR

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: 30V NCH+NCH POWER MOSFET
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 4.5A 2.4W Surf...
DataSheet: QH8KA1TCR datasheetQH8KA1TCR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.15610
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: --
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Power - Max: 2.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8
Description

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QH8KA1TCR is a type of transistor array, and is a highly popular device in the electronics industry due to its excellent performance and wide range of application fields. This article will discuss the working principle and potential applications of the QH8KA1TCR.

The QH8KA1TCR is a Field Effect Transistor (FET) and is made up of an array of transistors that are connected together in order to create a more efficient and reliable device. FETs are usually bi-directional devices, meaning that they can be used to both amplify and control signals as needed. This makes them perfect for use in circuits that require highly precise control, such as in microcontroller applications.

The basic principle behind the QH8KA1TCR is that it uses a combination of two different types of FETs to create a high voltage and current gain. The first type of FET is an N-channel FET, which is used to amplify signals by providing an insulated gate and allowing for greater control over the current flow. The second type of FET is a P-channel FET, which is used to reduce the current through the circuit, allowing it to be more efficient in comparison to other devices.

The combination of the N-channel FET and the P-channel FET creates a powerful and efficient device that is well suited for a variety of applications. For example, the QH8KA1TCR can be used in circuits that require high speeds, such as switch mode power supplies and motor controls, or in precision circuit assemblies. These circuits can be used in a range of industries, including automotive, industrial, and consumer electronics.

The QH8KA1TCR is also useful for over/undervoltage monitoring and protection, power staging, noise filtering, pulse control, and signal switching. It can also be used to individualize and dim LED lights, as well as to regulate the speed of DC motors.

In addition to its high performance and wide range of applications, the QH8KA1TCR is also exceptionally reliable. It is designed to withstand harsh environments and is resistant to both thermal and mechanical shock, making it ideal for use in a range of industries. It is also very cost-effective, making it an excellent choice for designers looking to minimize costs.

In conclusion, the QH8KA1TCR is an extremely popular and reliable device used in a range of industries. It is well suited for applications that require high levels of performance and is cost-effective, making it an ideal choice for designers looking to reduce costs. Its combination of N-channel and P-channel FETs also allows for greater precision and control, making it ideal for microcontroller applications.

The specific data is subject to PDF, and the above content is for reference

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