QH8KA4TCR Discrete Semiconductor Products |
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Allicdata Part #: | QH8KA4TCRTR-ND |
Manufacturer Part#: |
QH8KA4TCR |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 30V NCH+NCH MIDDLE POWER MOSFET |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 9A 1.5W Surfac... |
DataSheet: | QH8KA4TCR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.27082 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9A |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 10V |
Power - Max: | 1.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | TSMT8 |
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Transistors are an extremely important tool in any electronics system. They are used to control or direct the flow of electrons in circuit designs. In this article, we will discuss the application and working principle of QH8KA4TCR arrays.
The QH8KA4TCR array is a four-column MOSFET (Metal Oxide Semiconductor Field Effect Transistor) array. It consists of four independent MOSFET parts. Each part consists of a source, drain and gate. All four parts are identical and are operated with the same supply voltage. The array is commonly used in high-frequency applications such as radio frequency, and is also used in high power applications.
A MOSFET works by having a controlled electrode between the source and the drain. The voltage applied to the gate affects the flow of current between the source and the drain. If the voltage is high, then the gate will allow current to flow. On the other hand, if the voltage is low, then the gate will prevent current from flowing. Because of this, the gate voltage can be used to control the amount of current that flows in a circuit.
The QH8KA4TCR array is capable of controlling a wider range of current, thanks to its four independent MOSFETs, than a single MOSFET. This makes it well suited for applications that require a high level of accuracy in controlling current. Additionally, since it allows for finer control of current, it can be used in applications that require higher power switching. For example, the array can be used to control the output of a high-power amplifier.
The QH8KA4TCR array can also be used in applications that require a wide range of output voltages. This is possible because the array can be used to control the voltage drop between the source and the drain. The array can be used to create a wide range of output voltages, from just a few volts to hundreds of volts. This makes it useful for applications such as power supplies.
When using a QH8KA4TCR array, the gate voltage must be precisely adjusted. This is because the current flowing through the array is directly proportional to the gate voltage. If the gate voltage is not correctly adjusted, then the current flowing through the array may become unstable. This can cause the entire system to malfunction or fail. To ensure that the gate voltage is correctly adjusted, the array should be properly calibrated.
The QH8KA4TCR array is capable of providing a wide range of power and voltage switching applications. It can be used to precisely control the current and voltage in a circuit, making it suitable for many applications. It is well suited for high-power and high-frequency applications. Additionally, it can be used for voltage and current control in power supplies and other circuits.
The specific data is subject to PDF, and the above content is for reference
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