QH8KA2TCR Discrete Semiconductor Products |
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Allicdata Part #: | QH8KA2TCRTR-ND |
Manufacturer Part#: |
QH8KA2TCR |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 30V NCH+NCH POWER MOSFET |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 4.5A 2.4W Surf... |
DataSheet: | QH8KA2TCR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.17544 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A |
Rds On (Max) @ Id, Vgs: | 73 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 125pf @ 15V |
Power - Max: | 2.4W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | TSMT8 |
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QH8KA2TCR Application Field and Working Principle
The QH8KA2TCR (Quad High-Side N-Channel MOSFET Array) from Infineon Technologies is part of their TrenchMOS™ family, which provides superior performance, higher current ratings, higher operating temperature and greater robustness, making it ideal for applications such as motor control and automotive power systems.
The QH8KA2TCR is a monolithic, high-side N-channel MOSFET array containing four independent, logic-level-compatible, high-side MOSFETs. It features an asymmetrical drive capability, allowing the device to be driven at lower supply voltages than standard MOSFET arrays.
Because of the integrated bootstrap diodes, the QH8KA2TCR uses less external components than some other MOSFET arrays, allowing for higher integration and saving on board space. The asymmetrical drive capability of the device also reduces the number of components needed to drive the array.
Working Principle
The QH8KA2TCR has four independent high-side MOSFETs, each of which is controlled via a logic signal. When the logic signal is low (logic “0”), the MOSFET is off and the circuit between the high-side and low-side is disconnected. When the logic signal is high (logic “1”), the MOSFET turns on and the high-side output is connected. The turn-on and turn-off times of the MOSFETs can be controlled via the external drive inputs, allowing for flexible control of the circuit.
The QH8KA2TCR also features integrated bootstrap diodes, which provide a path for high-side drive current to flow to the gate of the MOSFET, allowing the device to be driven at lower supply voltages. The bootstrap diodes also provide a level-shifted output voltage, enabling the device to drive a low-side circuit at a higher voltage than that of the supply voltage.
The QH8KA2TCR also features an integrated protection circuit, which protects the device from over-current, over-temperature and ESD events. This protection circuit allows the device to operate safely and reliably, even in harsh environments.
Conclusion
The QH8KA2TCR is a quad high-side N-channel MOSFET array from Infineon Technologies, which provides superior performance, higher current ratings and higher operating temperature. It features an asymmetrical drive capability, allowing it to be driven at lower supply voltages than other MOSFET arrays, as well as integrated bootstrap diodes and protection circuit. The QH8KA2TCR is ideal for applications such as motor control and automotive power systems.
The specific data is subject to PDF, and the above content is for reference
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