Allicdata Part #: | QS6J11TR-ND |
Manufacturer Part#: |
QS6J11TR |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2P-CH 12V 2A TSMT6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 2A 600mW Surfa... |
DataSheet: | QS6J11TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.15497 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Base Part Number: | *J11 |
Supplier Device Package: | TSMT6 (SC-95) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 600mW |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2A |
Drain to Source Voltage (Vdss): | 12V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
QS6J11TR Application Field and Working Principle
The QS6J11TR is an overcurrent protection device with an integrated transistor array, which is used to protect various components against excessive current and overvoltage. It is part of the AutoMOS family of products, designed by Digi-Key, a major distributor of automotive electronics and components. The chip is comprised of 6 series n-channel MOSFETs, connected with an integrated gating system, enabling simultaneous operation of all the FETs.
The device is commonly used in power supply and electronic motor control, as well as other applications. It features low voltage drop, high current carrying capability, low switch-on noise, and low thermal resistance. Its unique gating system and integration of multiple FETs also allow for easy customization and adaptability, enabling designers to customize the circuit based on the specific power needs.
The operation of the device is as follows: When overcurrent is sensed by the internal circuit, the integrated gating system sends a signal to the FETs and these are switched on to form a series n-channel, thus shunting the overcurrent and protecting the other components. The gating system operates at low voltage, ensuring that no additional power is consumed when the FETs are in the non-active state. The QS6J11TR also features built-in protection from overvoltage, ensuring the safety of the other components.
The QS6J11TR not only provides a cost effective solution for overcurrent protection but also gives designers the flexibility to customize the circuit based on their own power needs. In addition, its integrated gating system and low operating voltage makes it an ideal choice for applications where reliability and low power consumption are of paramount importance.
In summary, the QS6J11TR is an overcurrent protection device with an integrated transistor array and gating system, making it a reliable, efficient, and cost effective solution for various automotive and electronic motor control applications. It features low voltage drop and low thermal resistance, enabling it to operate at low power, and its integrated protection from overvoltage ensures safe operation of the other components.
The specific data is subject to PDF, and the above content is for reference
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...