| Allicdata Part #: | QS6J3TR-ND |
| Manufacturer Part#: |
QS6J3TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET 2P-CH 20V 1.5A TSMT6 |
| More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 1.5A 1.25W Sur... |
| DataSheet: |  QS6J3TR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Base Part Number: | *J3 |
| Supplier Device Package: | TSMT6 (SC-95) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power - Max: | 1.25W |
| Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 215 mOhm @ 1.5A, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.5A |
| Drain to Source Voltage (Vdss): | 20V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 P-Channel (Dual) |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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The QS6J3TR is an ultra-short channel, N-channel enhancement mode MOSFET array. It is an advanced device and works on an active gain control principle. Its special features include dual channel N-type MOSFETs in a single package, minimized power consumption, and power-on delay.
The QS6J3TR is a high-efficiency, high-speed MOSFET array that focuses on fast switching as well as low on-state and off-state resistance. Its operating voltage range is between 2.5 and 5.5 volts and its current rating is up to 1.5A. It features high frequency operation that allows it to reach switching speeds of up to 1000kHz. Its maximum power dissipation is 2W.
The QS6J3TR finds application in a variety of power conversion applications such as high-efficiency power supplies, delay circuits, switched-mode power supplies, and voltage amplifiers. It is suitable for high-density boards and its small size enables it to be used in compact projects with limited real estate. Additionally, it can be used in audio amplifiers, linear amplifiers, circuit protection systems, signal generators, voltage and current regulators, and analog signal conditioning systems.
The working principle of the QS6J3TR includes a gate-firing function which is enabled by applying a signal to the gate. The voltage on the gate determines the conduction of the MOSFETs. If the gate voltage is above the threshold voltage, the MOSFET will be in its on-state, and the drain current will pass through the device. If the gate voltage is below the threshold voltage, the device will turn off and the drain current will cease.
The QS6J3TR also features a variety of protection features such as electrostatic discharge (ESD) protection and current limiting. It also comes with an overload protection feature. This feature protects the device from high-temperature conditions, such as those encountered in high voltage applications. Additionally, the device’s small size enables it to be used in tight spaces.
The QS6J3TR is an advanced device that offers consistent performance and a wide range of applications. With its high efficiency and small size, it is an ideal choice for power conversion applications. Its power-on delay feature and versatility make it a valuable addition to any circuit.
The specific data is subject to PDF, and the above content is for reference
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