Allicdata Part #: | QS6J1TR-ND |
Manufacturer Part#: |
QS6J1TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2P-CH 20V 1.5A TSMT6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 1.5A 1.25W Sur... |
DataSheet: | QS6J1TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Base Part Number: | *J1 |
Supplier Device Package: | TSMT6 (SC-95) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 1.25W |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 215 mOhm @ 1.5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The QS6J1TR is a discrete, low voltage transistor array with 6 N-channel depletion mode junction field-effect transistors. This array is composed of the vertical gates and source connections of the applicable chips, and functions as an integrated circuit composed of the applicable chips. The device features a Vgs of 5V to -5V and a drain-source voltage of 200V. The maximum Rds(on) is 5Ω. It also features an avalanche energy rating of 15A/W and can run at a temperature range of -55 to 150 degrees Celsius.
The QS6J1TR is employed in a wide variety applications, including low voltage integrated circuits, logic circuits, amplifier circuits, filters, switching circuits, and switching power supplies. It can be used to drive motors, large LEDs, and high resistance loads. Its large current output and low on-resistance make it an ideal solution for power regulation and as part of voltage regulators. It is also used to couple two circuits that would otherwise not interact due to high electrical or magnetic isolation.
The working principle of the QS6J1TR is based on the idea of a field-effect transistor, or FET. A FET consists of a semiconductor channel, the gate terminal, the source terminal and the drain terminal. An electric field generated by the gate terminal controls the current flowing through the channel. This gate voltage controls the drain to source current by modulating the channel resistance. The gate voltage is isolated from the drain and source and is therefore not affected by the varying current flowing in the channel.
In the QS6J1TR, 6 N-channel FETs are connected in parallel by linking their source and drain terminals together. When a voltage is applied to the gate terminal, the drain to source resistance decreases and an larger current can flow. This transistor array can therefore be used for power regulation, as a switch in a logic circuit, and for voltage regulation in an amplifier circuit.
The QS6J1TR transistor array is a versatile, low voltage device that can be used in many applications. Its 6 N-channel FETs are connected in parallel, allowing for a lower on-resistance and higher current, making it an ideal solution for power regulation, as part of voltage regulators, and for coupling two circuits. As it is a low voltage device, it can be used in a variety of circuit designs and offers excellent performance when used in switching power supplies, filter circuits and more.
The specific data is subject to PDF, and the above content is for reference
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