Allicdata Part #: | RC28F128J3D75DTR-ND |
Manufacturer Part#: |
RC28F128J3D75D TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M PARALLEL 64EASYBGA |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par... |
DataSheet: | RC28F128J3D75D TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | StrataFlash™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8, 8M x 16) |
Write Cycle Time - Word, Page: | 75ns |
Access Time: | 75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-TBGA |
Supplier Device Package: | 64-EasyBGA (10x13) |
Base Part Number: | 28F128J3 |
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RC28F128J3D75D TR is a semiconductor memory utilized for non-volatile storage. Non-volatile memory is able to retain its data after a power cycle, meaning it does not have to be powered continuously in order to store data. This makes non-volatile memory an excellent choice for long term data storage.
Application field
The RC28F128J3D75D TR can be found in an array of applications in the automotive and consumer electronics fields, such as those needing to store audio and video files, digital cameras, and other embedded systems. It is also used in applications utilizing complex control functionality, such as motor control and motion control, and applications requiring long term storage, like setting and key data, regardless of periodic power cycle.
Working Principle
RC28F128J3D75D TR utilizes a charge trapping cell, which consists of a floating gate insulated from the channel area of the transistor and the source and drain, where the electrons are stored. In order to write the data to the memory, an electric current is used to inject electrons to the floating gate by means of the drain, thus increasing the threshold voltage of the transistor. The electrons then remain in the floating gate until the memory is erased.
In order to read the data from the memory, the voltage of the drain is increased and reads from the transistors; the data being sent to the output with states of logic "0" or "1". The logic is based on the amount of electrons stored in the memory\'s floating gate; the presence of electrons reduces the drain’s voltage, and thus it is determined to be a logic "0" and vice versa. The lack of electrons in the floating gate results in the drain’s voltage being the same as the voltage used to program the memory and thus the output is determined to be a logic "1".
The RC28F128J3D75D TR supports features such as: 25ns program time, 70μA standby current, an endurance of 1000 write cycles, a data retention time of 20 years, and a working temperature range of -40°C to +125°C.
The RC28F128J3D75D TR is an excellent choice for those looking for reliable and long lasting non-volatile memory solutions with a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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