RC28F640J3D75B TR

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Memory

The RC28F640J3D75B TR is a type of memory that plays a significant role in providing memory support for various industry applications. This type of memory belongs to the flash memory family and consists of an array of non-volatile, electrically erasable and programmable cells.

The RC28F640J3D75B TR offers a total of 8Mb, or 64M (8 megabits) of flash memory, which can accommodate up to 8,192 individual 8-bit bytes of data. It is organized into 1K blocks with a single 4K block containing four 4K sub-blocks. This 4K sub-block further contains two pages of 2K words, while each word is composed of 16 bits of flash memory.

Applications

The RC28F640J3D75B TR provides a reliable and robust memory solution that can be used for multiple applications such as in gaming devices, handheld devices, automotive control units, industrial applications and also for data collection. It is also suitable for embedded applications such as for interfacing with LCD screens, digital signal processing, memory cards and other digital equipment. It is widely used in the medical industry due to its low power consumption and flexible architecture.

Working Principle

The working principle of this memory is quite simple. When data is stored in the RC28F640J3D75B TR or written to the Flash memory cell, an address is given to the corresponding block, page and word. To access stored data the user will need to refer to the corresponding address. Reading and writing operations occur on these cells in accordance with the data given by the user. This type of flash memory is divided into two types known as single-level cell and multi-level cell ones. The single-level cells are unequal in size whereas the multi-level cells have equal size.

Read and write operations on the cells is done in two steps. These two steps are the first step to erase and second step to program the flash memory cell. In the first step of erasing, a laser diode is used which generates the required voltage to erase the cells. In order to program, the write operation is performed in the cells and a laser diode generates the required voltage to program the cells.

The RC28F640J3D75B TR memory is designed in such a way that it ensures fast erase and program times making it more attractive to users. Moreover, it is compatible with various operating systems and other devices making sure that the user will have maximum flexibility when using this memory.

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