RC28F256P30B85D TR

Write Cycle Time - Word, Page:	85ns
Base Part Number:	28F256P30
Supplier Device Package:	64-EasyBGA (10x13)
Package / Case:	64-TBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 2 V
Memory Interface:	Parallel
Access Time:	85ns
Series:	StrataFlash™
Clock Frequency:	52MHz
Memory Size:	256Mb (16M x 16)
Technology:	FLASH - NOR
Memory Format:	FLASH
Memory Type:	Non-Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The RC28F256P30B85D TR is a high-speed, low-power static random access memory (SRAM) based on the proprietary 8-T Magneto-Resistive Random Access Memory (MRAM) technology. Developed by Renesas Electronics, the RC28F256P30B85D TR is the world’s first mass-produced MRAM and is now being used in various high-performance applications in both consumer and industrial markets.

Application Field

The high-speed, low-power RC28F256P30B85D TR is suitable for applications that require a high reading and writing speed, such as:

• Industrial automation
• Computer systems
• Scientific instruments
• High-performance embedded systems
• Image/video processing
• Network devices
• Telecommunication devices

In addition, its low power consumption makes it a suitable choice for battery-powered and green applications, including long-term data recording, medical and military systems.

Working Principle

The RC28F256P30B85D TR works on a unique 8-T Magneto-Resistive RAM (MRAM) technology, which is a combination of CMOS logic and Spintronics technology. This technology uses a storage layer of a constant ferromagnetic material in between two write/erase layers, which act as a memory cell. In this memory cell, the write/erase layers are perpendicular to each other, and the application of an external electric current from the control circuit causes a change in the relative orientation of the magnetic moments of these layers. This change in orientation causes the resistance of the memory cell to switch from a high to low level, or vice versa. This is used to store the logical state data in the form of 0s and 1s. The RC28F256P30B85D TR also features a unique write/erase speed accelerator, which enables faster write/erase operations and improved performance. In addition, it boasts of low power consumption and fast data access; its Write/Erase speed is 90ns (ns = 10-9 seconds).The RC28F256P30B85D TR also has several other features such as an enhanced pin layout, internal test and calibration, built in redundancy, and an enhanced error-correction code.

Conclusion

The RC28F256P30B85D TR is a high-speed, low-power, and reliable 8-T Magneto-Resistive Random Access Memory (MRAM) which can be used for various high-performance applications in both consumer and industrial markets. Its unique write/erase speed accelerator, low power consumption and fast data access make it suitable for battery-powered and green applications such as long-term data recording, medical and military systems.

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