Allicdata Part #: | RC28F640P30T85A-ND |
Manufacturer Part#: |
RC28F640P30T85A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M PARALLEL 64EASYBGA |
More Detail: | FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 52MH... |
DataSheet: | RC28F640P30T85A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 85ns |
Base Part Number: | 28F640P30 |
Supplier Device Package: | 64-EasyBGA (10x13) |
Package / Case: | 64-TBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 85°C (TA) |
Voltage - Supply: | 1.7 V ~ 2 V |
Memory Interface: | Parallel |
Access Time: | 85ns |
Series: | StrataFlash™ |
Clock Frequency: | 52MHz |
Memory Size: | 64Mb (4M x 16) |
Technology: | FLASH - NOR |
Memory Format: | FLASH |
Memory Type: | Non-Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
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RC28F640P30T85A is a Flash Memory manufactured by the semiconductor manufacturer Renesas. It is a dual voltage flash (1.7V to 3.6V) memory that has a write speed of 30ns with K = 8, a storage capacity of 8Mbits, and a frequency of 66MHz. It has an array of 64-bit wide, 64K-word banks, and is designed for high performance applications with a 31MHz cut-off frequency. In addition, to minimize the system’s power consumption, the RC28F640P30T85A is designed to support 1.7-3.6V dual-voltage operations.
Application Field
The RC28F640P30T85A, being a type of flash memory, is suited for a variety of storage and memory applications. Examples include but are not limited to, cache memory, system ROM, program code storage, memory-mapped flash memory, Flash-reconfiguration applications, and embedded controllers. Furthermore, the device is suitable for a wide range of embedded applications, such as automotive control systems, power supplies, automotive body control, multimedia and audio systems, wearables, HMI systems, and telematics.
Working Principle
The RC28F640P30T85A is designed using a V-tron 8M Flash Architecture and utilizes a CMOS process. In addition, the device is designed to maintain a write speed of 30ns with K = 8 and a frequency of 66MHz. To reduce power consumption it is built to operate with dual-voltages of 1.7V and 3.6V. This design allows the device to store code and data with fast read and write access speed.
The RC28F640P30T85A has a storage capacity of 8Mbits. It is a 64-bit wide, 64K-word bank Flash memory that is divided into two banks, each with 64K of data. In addition, it has an array of three chip-enable pins that allow the device to support up to two banks of 64K words. Each bank is segmented into 32 pages of 256 bytes allowing up to 256 bytes in a single program operation.
The principle of operation of the RC28F640P30T85A is fairly straightforward. The device is accessed using its address pins. Voltage is then applied to the chip enable pins and the banks. Read and write operations are then enabled depending on whether the desired task is to store data or retrieve it. Data is stored in a 64-bit wide, 64K-word bank which is segmented into 32 pages of 256 bytes. The device is designed for flexibility and convenience as it offers several programming options and features. These featuresinclude boot block, data block protection, and write protection.
Overall, the RC28F640P30T85A is a high performance Flash memory that is suitable for a wide range of embedded applications. It is designed with double voltage operation to reduce power consumption, and with a write speed of 30ns with K = 8, a storage capacity of 8Mbits, and a frequency of 66MHz. It has an array of 64-bit wide, 64K-word banks, and it also offers several programming options and features such as boot block, data block protection, and write protection.
The specific data is subject to PDF, and the above content is for reference
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