RC28F128P33T85A

RC28F128P33T85A is a type of static RAM (SRAM) integrated circuit manufactured by ISSI which belongs to a family of high-speed, low-power, non-volatile memory devices. The IC offers 128mbit of memory organized as 16 megabytes (MB) of data. In terms of power consumption, the IC consumes 50% lower power than the current standard for static RAM devices.

The RC28F128P33T85A is well-suited for use in applications where low power and high speed are essential such as portable devices, wireless communications, automotive environments, and medical systems. The device is designed for use in fast-boot applications, high-speed data buffers, and non-volatile storage areas.

Working Principle

The RC28F128P33T85A is a non-volatile device featuring an asynchronous interface. The memory array of the RC28F128P33T85A consists of four banks, each containing four 4Mb blocks. Each block can be configured as an array of 4096 different words. The size of the data word is configurable and may vary from 4 to 32 bits.

The memory array is organized into virtual arrays. The virtual arrays are formed by combining memory blocks as either independent blocks or row/column/page wise. The configuration of the virtual array determines the size of the words and the access speed of the array.

The RC28F128P33T85A supports programmable read and write speeds. The read speeds range from 0.1 to 60MHz. The write speeds range from 0.1 to 30MHz. The device also supports programmable security features, data write protection, and power management.

The RC28F128P33T85A uses an asynchronous interface, allowing control signals to be sent along with the data. Signals include separate read, write, program, and erase commands. The device also supports concurrent read and write operations. The IC can also be used in a synchronous mode in which the data, address, and control signals are all transferred together.