| Allicdata Part #: | RC28F128P33TF60A-ND |
| Manufacturer Part#: |
RC28F128P33TF60A |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 128M PARALLEL 64EASYBGA |
| More Detail: | FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 52M... |
| DataSheet: | RC28F128P33TF60A Datasheet/PDF |
| Quantity: | 1000 |
| Write Cycle Time - Word, Page: | 60ns |
| Base Part Number: | 28F128P33 |
| Supplier Device Package: | 64-EasyBGA (10x13) |
| Package / Case: | 64-TBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 85°C (TC) |
| Voltage - Supply: | 2.3 V ~ 3.6 V |
| Memory Interface: | Parallel |
| Access Time: | 60ns |
| Series: | StrataFlash™ |
| Clock Frequency: | 52MHz |
| Memory Size: | 128Mb (8M x 16) |
| Technology: | FLASH - NOR |
| Memory Format: | FLASH |
| Memory Type: | Non-Volatile |
| Part Status: | Obsolete |
| Packaging: | Tray |
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Memory is an important part of computer systems and is integral to many different types of applications. The RC28F128P33TF60A is a Flash Memory chip developed by Renesas Electronics and is used in a variety of applications.
The RC28F128P33TF60A is a multi-purpose Flash memory designed for use in embedded systems. This type of memory is non-volatile, which makes it ideal for applications that require data storage with power off capability. The wide range of application fields that this type of memory can be used in include automotive, industrial, medical and consumer electronics.
The RC28F128P33TF60A is an 8 Mbit STT-MRAM Memory Chip with an interface speed of 180 Mbps. It is made with a static random access memory (SRAM) cell and a magnetic tunnel junction (MTJ) memory cell. The SRAM cell stores the data and the MTJ cell stores the memory information. The combination of these two cells allows for low power consumption and superior performance.
The RC28F128P33TF60A can be used in a variety of applications such as data storage, image processing, system health monitoring, automotive infotainment, remote control, low power embedded systems, as well as a variety of other applications requiring non-volatile memory with low power operation.
The working principle of the RC28F128P33TF60A is based on a static RAM (SRAM) cell and a magnetic tunnel junction (MTJ) cell. The SRAM cell stores the data and the MTJ cell stores the memory information. The two cells are connected by an interconnect and act together to store data. The SRAM cell can be accessed at any time while the MTJ cell takes longer to retrieve or store data.
The static RAM cell uses transistors to store data as a charge on a capacitor, while the MTJ cell uses two layers of different magnets to store a bit of binary information. The two cells are connected by an interconnect and they read and write data in parallel. This allows for faster storage and retrieval of data from the memory chip.
In addition, the RC28F128P33TF60A has built-in error correction, making it more reliable for applications where data accuracy is critical. The chip is also designed to have an Electronic Signature, which uses a unique code to protect data from unauthorized access.
The RC28F128P33TF60A is a highly advanced memory chip that is perfect for a wide range of applications. Its low power consumption and superior performance makes it an ideal choice for systems requiring non-volatile memory and low power operation. Its combination of SRAM and MTJ cells ensures faster storage and retrieval of data while its built-in error correction and Electronic Signature provide enhanced security and reliable data storage.
The specific data is subject to PDF, and the above content is for reference
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RC28F128P33TF60A Datasheet/PDF