RC28F256K3C120 Allicdata Electronics
Allicdata Part #:

853157-ND

Manufacturer Part#:

RC28F256K3C120

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256M PARALLEL 64EASYBGA
More Detail: FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 1...
DataSheet: RC28F256K3C120 datasheetRC28F256K3C120 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)
Base Part Number: 28F256K3
Description

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The RC28F256K3C120 is a member of the BOOT BLOCK family of NOR Flash memories manufactured by Micron Memory Products group. The device provides a proven, reliable, non-volatile, inexpensive and low power alternative to electrically erasable/programmable read-only memory (EEPROM) for storing and retrieving program functions, and data. The RC28F256K3C120 is ideally suited for applications such as file system, real-time clock and microcontroller functions in embedded systems.

The RC28F256K3C120\'s Flash memory cells are programmed in the field via electrical erase/program cycles. Each Flash memory cell has a floating gate which is electrically charged or discharged by Fowler-Nordheim tunneling when hot electrons are injected into or extracted from the gate. This effect allows the threshold voltage range of each cell to be changed, resulting in programming of "bits" of data. The storage capability of the memory cell is set by the tunneling injection level, which is used to distinguish between a "1" bit and a "0" bit.

The RC28F256K3C120 offers high rate of program/erase capability with a wide range of read/write operations. A typical program operation requires less than one millisecond and a typical erase operation requires about one second. In addition, the device also offers several features and characteristics that make it suitable for a variety of applications in embedded systems.

The device includes a 256-bit data bus and is available with two power supply voltages, which support a variety of applications. The two Nominal operating supply voltages are 1.8 Volts and 3.3 Volts. The device also features a Power-On Self-test (POST) capability which will reset the memory device upon initial power-up and then run the POST test to read the device status and all DQ bits. POST will then store all the information in the internal data register and navigate to the appropriate address in the memory array. The device also supports industrial temperature range and is compliant with MIL-STD-883 standards.

The RC28F256K3C120 is an ideal device for applications where permanent non-volatile data storage needs to be retained even in the event of a power failure. The device is well suited for applications where low power consumption and reliability are paramount. Its wide range of read/write operations make it suitable for applications such as file systems, real-time clocks, and microcontroller functions in embedded systems. The devices robust design and support for multiple power supply voltages make it a reliable choice for embedded systems in industrial and automotive environments. The device also complies with the MIL-STD-883 specifications, ensuring robust operation in extreme temperatures and harsh environments.

The specific data is subject to PDF, and the above content is for reference

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