RGTH00TS65DGC11 Allicdata Electronics
Allicdata Part #:

RGTH00TS65DGC11-ND

Manufacturer Part#:

RGTH00TS65DGC11

Price: $ 3.53
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: IGBT 650V 85A 277W TO-247N
More Detail: IGBT Trench Field Stop 650V 85A 277W Through Hole ...
DataSheet: RGTH00TS65DGC11 datasheetRGTH00TS65DGC11 Datasheet/PDF
Quantity: 21
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 3.20670
10 +: $ 2.86083
25 +: $ 2.57494
100 +: $ 2.34599
250 +: $ 2.11713
500 +: $ 1.89970
1000 +: $ 1.60215
Stock 21Can Ship Immediately
$ 3.53
Specifications
Power - Max: 277W
Supplier Device Package: TO-247N
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 54ns
Test Condition: 400V, 50A, 10 Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
Gate Charge: 94nC
Input Type: Standard
Switching Energy: --
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 85A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Introduction

The RGTH00TS65DGC11 is an IGBT (Insulated Gate Bipolar Transistor) device designed for various applications, such as power supply, servo drives and air conditioners. It is a single device developed by STMicroelectronics and its technical specifications are as follows: collector-emitter voltage of 650V, DC current gain of 8.5A, collector-emitter saturation voltage of 2.5V and maximum total power dissipation of 400W. Its usage allows low switching time and high power conversion efficiency.

Application Areas

The RGTH00TS65DGC11 has been specially developed for motor soft start applications, air conditioners and for switch mode power supplies. This device fits in the application areas of power modules, motor drivers and various other industrial applications. It also comes into use in solar energy inverters, uninterruptible power supplies, lighting applications and various other DC power supply applications.

The device offers life and performance advantages, thus reducing energy costs while also providing enhanced power conversion efficiency and power quality.

Working Principle

The working principle of the RGTH00TS65DGC11 IGBT semiconductor is based on the ‘Voltage Controlled MOSFET Bipolar Junction Transistor’ (VBCMOSFET-BJT) configuration. It has a semiconductor gate, an isolated gate, and a P+ layer, which works together to control the current flow and the potential of the device.

The gate voltage is applied to the insulated gate, which converts it into a potential, allowing the electrons to transfer through the P+ layer, between the collector and the emitter. This process is known as ‘collector current modulation’ and it is what allows the device to control the flow of the current.

The RGTH00TS65DGC11 also works on the principle of ‘avalanche breakdown’ and ‘Zener breakdown’, which are responsible for producing the collector-emitter voltage of 650V and the maximum dissipation of 400W.

Conclusion

The RGTH00TS65DGC11 is an IGBT semiconductor, developed by STMicroelectronics, which is suitable for a wide range of applications. The device has been developed for motor soft-start applications, as well as for power supply, servo drives and air conditioners. Its unique VBCMOSFET-BJT configuration and modulation technique allow it to control the current, while its efficient energy management ensures that it is highly energy efficient. Thus, the device is the ideal solution for reliable and high performing applications.

The specific data is subject to PDF, and the above content is for reference

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