RGTH80TS65DGC11

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The RGTH80TS65DGC11 is a type of insulated gate bipolar transistor (IGBT) designed for applications from 0 to 800V, specifically designed for motor drives, solar power and other applications that require a low loss switching device. This single IGBT is ideal for all of these applications, as it has handling capabilities up to 80A and a maximum collector-emitter voltage (VCES) of 650V.

The RGTH80TS65DGC11 is a single IGBT with a built-in temperature sensor and an over-current protection circuit. The IGBT is designed to operate at high switching frequencies, and it has a high speed turn-on, low gate drive voltage and high isolation capability. These features make the RGTH80TS65DGC11 ideal for applications where a fast response time is important, as well as applications where noise or radiation is a concern.

With a maximum power dissipation of 220W, the RGTH80TS65DGC11 is capable of operating in a wide range of temperatures, from -50 to 150°C. This ensures that the IGBT can be used in the most extreme environments or high powered applications. In addition, the temperature sensor built in to the device allows the system controlling the IGBT to monitor the temperature and make necessary adjustments accordingly.

The IGBT also has an integrated gate drive circuit, which makes it easier to use than conventional IGBTs. This built-in gate drive circuit reduces the amount of external circuitry needed, allowing for a more compact overall design. This gate drive circuit also makes the device more efficient, as less power is wasted in controlling the IGBT.

The RGTH80TS65DGC11 operates on the principle of unipolar conduction. In this type of conduction, the voltage between the collector and the emitter remains constant, while the resistance between the two varies depending on the current flowing through them. This property allows the device to have very low switching losses, and makes it ideal for applications that require a low switching speed.

The RGTH80TS65DGC11 is ideal for applications that require a low switching speed, low loss switching device, and high power handling capabilities. This single IGBT is capable of handling up to 80A and can operate in temperatures ranging from -50 to 150°C. Its integrated gate drive circuit reduces external circuitry and makes the device more efficient, and its unipolar conduction principle creates low switching losses. All of these features make the RGTH80TS65DGC11 extremely versatile and highly suitable for applications like motor drives and solar power.

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