RGTH60TS65DGC11

Power - Max:	194W
Supplier Device Package:	TO-247N
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	58ns
Test Condition:	400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C:	27ns/105ns
Gate Charge:	58nC
Input Type:	Standard
Switching Energy:	--
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 30A
Current - Collector Pulsed (Icm):	120A
Current - Collector (Ic) (Max):	58A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The RGTH60TS65DGC11 is a type of high-power switching device that typically belongs to the category of transistors known as insulated gate bipolar transistors (IGBTs). Primarily, it is a single IGBT device and is mainly used for applications that require a high voltage and high power current switch. This article will explain the application fields and the working principle of the RGTH60TS65DGC11 device.

Application Fields of the RGTH60TS65DGC11

The RGTH60TS65DGC11 is into used in High-Frequency applications, and is worthwhile for applications that involve an interruption of high voltage, high current and ultra-high power currents. These devices can be used in motion control, renewable energy and motor drives, with the primary function of turning electrical current on and off with a high degree of efficiency.The RGTH60TS65DGC11 is highly resistant to wear and tear and consists of no moving parts. This imparts a longer life span to the device, therefore it is heavily relied upon in industrial and commercial applications ranging from manufacturing plants and food processing to automotive production lines. The IGBT controlled by the RGTH60TS65DGC11 is a type of semi-conductor that is extremely tolerant to electrical transients and extreme operating conditions; hence it acts as a primary power solution for switching power in applications that require high-power level control, such as in robotic systems.

Working Principle of the RGTH60TS65DGC11

The RGTH60TS65DGC11 device is a hybrid power switch that combines the benefits of both Metal Oxide Semiconductor (MOS) and Bipolar Junction Transistor (BJT) technologies. It is based on the principle of bidirectional current flow through a single relatively low on-state voltage. When forward-biased, the device produces a large amount of current and has a low voltage drop across its junction. These features make it ideal for high power control applications that require a switch to control the flow of current in both directions. The RGTH60TS65DGC11 is also capable of operating at high frequencies, thus making it suitable for large-scale high-speed industrial applications.The RGTH60TS65DGC11 has two separate gates for controlling the current flow and switching the device on and off. This ensures that the device is always in the correct state and reduces the possibility of a malfunction.

Conclusion

In conclusion, the RGTH60TS65DGC11 is a single IGBT device intended for high-frequency applications. It is designed to control the flow of high-power current, as well as offering tolerance to electrical transients and extreme operating conditions. Its two separate gates offer additional protection, while its low on-state voltage drop ensures higher efficiency to the device. As a result, the RGTH60TS65DGC11 is widely used in industrial and commercial applications requiring a reliable power switch.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description