
Allicdata Part #: | RGTH00TS65GC11-ND |
Manufacturer Part#: |
RGTH00TS65GC11 |
Price: | $ 2.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | IGBT 650V 85A 277W TO-247N |
More Detail: | IGBT Trench Field Stop 650V 85A 277W Through Hole ... |
DataSheet: | ![]() |
Quantity: | 293 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 2.61450 |
10 +: | $ 2.33163 |
25 +: | $ 2.09866 |
100 +: | $ 1.91205 |
250 +: | $ 1.72552 |
500 +: | $ 1.54832 |
1000 +: | $ 1.30580 |
2500 +: | $ 1.24362 |
Power - Max: | 277W |
Supplier Device Package: | TO-247N |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 50A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 39ns/143ns |
Gate Charge: | 94nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 200A |
Current - Collector (Ic) (Max): | 85A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The RGTH00TS65GC11 transistor is a single IGBT device that is widely used in a variety of devices, ranging from audio to mobile phones and other electronics. In this article, we will look at the application field of the RGTH00TS65GC11, as well as its working principle.
The RGTH00TS65GC11 transistor is an ideal device for use in applications that require high-speed switching and power conversion. In particular, it is commonly used in solar cells, inverters, motor drives and other motor control applications. In such applications, the RGTH00TS65GC11 is able to reduce power losses through the use of its low on-state resistance.
The RGTH00TS65GC11 also has a high gain band and a high breakdown voltage, making it very efficient in high switching frequencies. Additionally, it is capable of efficiently delivering high power levels and making power delivery efficient and reliable. This makes it an ideal choice for medium to large power conversion and switching applications.
Apart from its application in power electronics and motor control, the RGTH00TS65GC11 transistor is also used in consumer electronics, including audio stimulators and amplifiers, mobile phones, and other consumer electronics products. Its low on-state resistance and high gain band makes it very effective in these applications.
The RGTH00TS65GC11 transistors work on the principle of two bipolar conductors, one positive (emitter) and one negative (collector). When the emitter-base junction is forward biased, it results in the flow of electrons from the emitter to the collector. This results in a current flow through the collector-base junction, which in turn increases the collector current. As the collector current increases, the Collector-Emitter voltage increases, resulting in the positive turn-on voltage of the transistor.
The RGTH00TS65GC11 also works on the principle of a field-effect transistor (FET). In this application, the RGTH00TS65GC11 is made up of a MOSFET (metal-oxide-semiconductor field-effect transistor). When the gate voltage is applied, the transistor becomes conductive and the current flow increases from the source to the drain. This increase in current causes the voltage at the drain and source to go up and the device turns on.
The RGTH00TS65GC11 is a versatile transistor that can be used for many different applications. It is suitable for high-speed switching and power conversion applications as well as consumer electronic applications. It is reliable, efficient, and long-lasting, making it a popular choice for a variety of applications.
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