RGTH50TS65GC11

Power - Max:	174W
Supplier Device Package:	TO-247N
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	400V, 25A, 10 Ohm, 15V
Td (on/off) @ 25°C:	27ns/94ns
Gate Charge:	49nC
Input Type:	Standard
Switching Energy:	--
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 25A
Current - Collector Pulsed (Icm):	100A
Current - Collector (Ic) (Max):	50A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction
The RGTH50TS65GC11 is a single IGBT transistor that belongs to the Transistors family. It is used in high power electrical applications requiring excellent efficiency and reliability. This short article will discuss the application field, working principle, and related design considerations of the RGTH50TS65GC11.
Application Field
The primary application field of the RGTH50TS65GC11 are medium to high voltage motor drives, as well as photovoltaic inverters. The advantages of its use in medium to high voltage applications include low loss and high efficiency. Additionally, the transistor allows for fast switching and can be used to control high current. Additionally, its bidirectional features make it suitable for applications that require the control of voltage, current, and other waveforms.
Working Principle
The working principle of the RGTH50TS65GC11 is based on the principle of a unipolar transistor. A single power source is connected to the collector, while the base is driven by a small current. This small current allows for the collector-emitter current to be controlled, thus enabling the switching process. The collector-emitter voltage is also under control and can be adjusted by this same small current from the base. In summary, the power source is used to generate a large current, which is then transferred via the base-emitter junction to the collector-emitter junction, and controlled by the base current.
Design Considerations
The RGTH50TS65GC11 transistors offer a variety of features and design considerations that engineers and designers must take into account. Firstly, the transistor has a low on-state resistance of only 1ohm. Additionally, it is capable of carrying up to 50A in current and can withstand up to 15A surge current without damage. Additionally, its rise and fall times are extremely low at 0.9 µs and 11µs respectively. This allows the transistor to switch at very high frequencies. Furthermore, the transistor features a wide operating temperature range of -55 °C to 150 °C and is UL, VDE, and IEC rated. Lastly, the transistor has a current transfer ratio of 80%.In order to ensure maximum performance, special design considerations must be taken into account, such as ensuring the base and collector paths have appropriate drive characteristics and impedance. Additionally, the base current must be kept within its specified range and proper gate drive impedance are required. Additionally, the collector-emitter path must not be overstressed and appropriate heatsink must be provided. Furthermore, the power source must be properly connected and its voltage must always be kept within its specified range.
Conclusion
The RGTH50TS65GC11 transistor is a single IGBT that is used in medium to high voltage motor drives, photovoltaic inverters, and other power electrical applications requiring low loss and high efficiency. Its low on-state resistance and its ability to withstand up to 50A of current while being capable of switching at very high frequencies make it an ideal choice for high-power applications. However, special design consideration must be made in order to ensure optimum performance and optimal heat dissipation.

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