RLZTE-1120B Allicdata Electronics
Allicdata Part #:

RLZTE-1120B-ND

Manufacturer Part#:

RLZTE-1120B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 19.1V 500MW LLDS
More Detail: Zener Diode 19.1V 500mW ±3% Surface Mount LLDS
DataSheet: RLZTE-1120B datasheetRLZTE-1120B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 19.1V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 28 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 15V
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Base Part Number: RLZ20
Description

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Introduction To RLZTE-1120B

The RLZTE-1120B is a single Zener diode from RLZTE semiconductors. It is a high power semiconductor diode used for a wide range of applications across many industries. Consequently, the RLZTE-1120B can be utilised in both consumer and industrial-grade electronics.

Application Field

The RLZTE-1120B is an efficient, low-cost single Zener diode which can find a wide range of applications in various industries. As a single Zener diode, it is suitable for use as regulators of current, voltage and power in devices such as comparators, oscillators, amplifiers and rectifiers. This makes the RLZTE-1120B suitable for a wide range of consumer-grade electronics such as televisions, DVD players and radios.It can also be used in more demanding application fields, such as automated test equipment, medical imaging systems and communication systems. The RLZTE-1120B is highly useful for applications in which very precise regulation is required. The device is incredibly reliable and can be counted on to provide very consistent results.

Working Principle

The RLZTE-1120B is a single Zener diode which works on the principle of avalanche breakdown. Avalanche breakdown occurs in a diode when the electric field around the device becomes very strong, allowing electrons to flow freely. This causes a rapid increase in current and voltage, which is then regulated by the diode.The method of regulation used in the RLZTE-1120B relies on the predictable behavior of its constituent materials. The semiconductor materials used to construct the device have predictable characteristics which allow for reliable and consistent regulation. This makes the RLZTE-1120B very useful for applications where accuracy and precision are very important.

Conclusion

The RLZTE-1120B is a high power semiconductor diode designed for a wide range of applications. As a single Zener diode, it is suitable for use as regulators of current, voltage and power in electronic devices. The device is incredibly reliable and can be counted on to provide very consistent results, making it suitable for industrial-grade applications. The RLZTE-1120B works on the principle of avalanche breakdown and relies on the predictable characteristics of its constituent materials to provide reliable and accurate regulation.

The specific data is subject to PDF, and the above content is for reference

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