RN2404TE85LF Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar junction transistors (BJTs) are three-terminal devices that can be used as amplifiers or switches depending on their application. The RN2404TE85LF is a single, pre-biased BJT that can be used as an amplifier or switch. In this article, we will discuss the application fields and working principles of the RN2404TE85LF.

The RN2404TE85LF is a two-layer silicon bipolar transistor with an Info SI® well-matched doping detector. It is a medium power transistor and is suitable for use in industrial, domestic and automotive electronics applications. The device has a maximum collector-emitter voltage of 24V, a continuous current gain of 27, a common-emitter AC current gain of 43, a typical transition frequency of 9.4MHz and a maximum power dissipation of 750mW. The device features a low thermal resistance, which allows it to operate efficiently even at high power levels. In addition, the device has good thermal stability, making it ideal for high temperature applications.

The RN2404TE85LF can be used to perform a variety of functions depending on its application. When used as an amplifier, the device can be used to increase the signal strength of an input signal. This is done by converting the signal current into voltage, which is then passed to the output of the amplifier. The device can also be used as a switch where the current can be switched on or off depending on the signal applied. Additionally, the device can be used for frequency selection, signal filtering, and analog signal modulation.

The RN2404TE85LF operates on the principle of a bipolar junction transistor. This type of transistor is made up of three layers surrounded by a semiconductor material such as silicon or germanium. The three layers are the base, collector, and emitter. A small current applied to the base of the transistor allows a larger current to flow between the collector and emitter. This allows the device to amplify or switch the output current.

The RN2404TE85LF is widely used in a variety of applications such as power amplifiers, switching, current limiting, and signal processing. Additionally, the device is used in telecommunications and industrial automation systems. The device is also widely used in consumer products such as mobile phones, laptops, and tablets.

In conclusion, the RN2404TE85LF is a two-layer silicon bipolar transistor that can be used as an amplifier or switch. The device features a low thermal resistance, good thermal stability, and has a maximum collector-emitter voltage of 24V. The device can be used in a variety of applications such as power amplifiers, switching, current limiting, and signal processing. The principle of operation is based on the concept of bipolar junction transistors and allows the device to amplify or switch the output current.

The specific data is subject to PDF, and the above content is for reference