RN2409,LF Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	S-Mini

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RN2409,LF Application Field and Working PrincipleRN2409,LF is a type of single, pre-biased bipolar junction transistor (BJT). It is designed to operate in the range of 0 to 10 V and can handle currents up to 300mA. It is useful in applications such as switching DC-DC converters, oscillators, motor control circuits and motor drive stages.The single pre-biased BJT is constructed of three pins that act as the collector, base, and emitter. This arrangement creates an n-type transistor, in which current flows from the base to the emitter. The collector is connected to ground, providing a return path for current travelling through the transistor.The pre-biased configuration of RN2409,LF allows it to be used without additional circuitry, as the voltage required to switch the transistor on is already preset. This reduces the amount of power required to operate the transistor and makes it an economical solution for many applications.The pre-biasing voltage is created by the charge carrier trapped at the junction between the base and collector. When a current is applied to the base-emitter junction, it creates an electrical field, which causes the charge carriers to move from the collector to the base. This creates an internal voltage, which is the voltage required to transition the transistor into the switched on state.Once the voltage reaches the level required for switching, electrons are able to move from the collector to the base, creating a current path between the emitter and collector. This current then flows through the transistor, allowing the required circuit operation.When thern2409,LF is used in switching systems, it is typically configured in a configuration known as complementary symmetry. In this configuration, two transistors are used, one n-type and one p-type. The n-type is used to switch the current on, and the p-type to switch it off. This allows for fast and efficient switching, which is often required in high-speed circuits.In conclusion, RN2409,LF is a single pre-biased bipolar junction transistor (BJT) designed for use in a range of applications that requires fast, efficient switching. It has a pre-biased configuration, meaning that it requires no additional circuitry for operation, and is often used in complementary symmetry configurations for high-speed switching.

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