RN2427TE85LF Allicdata Electronics
Allicdata Part #:

RN2427TE85LF-ND

Manufacturer Part#:

RN2427TE85LF

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 200MW SMINI
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2427TE85LF datasheetRN2427TE85LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05954
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Description

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The RN2427TE85LF is a single, pre-biased bipolar junction transistor (BJT) designed for a wide variety of applications. The transistor is rated at 8 amp and can handle a maximum of 50 volts in its maximum collector-emitter voltage. The device is optimized to provide a low standby power consumption and improved gain at a wide range of frequencies.

The RN2427TE85LF is an NPN transistor and contains an internal amplifier circuit. This internal amplifier boosts the output of the transistor, allowing it to provide more power than regular transistors. This makes the device suitable for amplifying weak signals or providing additional power when necessary.

The device also features a built-in pre-bias circuit. This is used to reduce the power consumption when the transistor is in the standby mode. The pre-bias circuit helps the transistor enter the base bipolar region and eliminates the need for an additional pre-bias current source. This helps the transistor to remain in the amp state, even when in the standby mode.

The RN2427TE85LF has a wide range of applications. It is commonly used in AC to DC converters, DC to DC converters, rectifiers and DC lighting. It is also suitable for consumer electronics, automotive and industrial applications as an amplifier or amplifier driver. The device can also be used in motor control applications as a switching device.

The RN2427TE85LF is an ideal device for applications where a low standby power consumption is required. Its internal pre-bias circuit helps reduce power consumption by eliminating the need for an additional pre-bias current source. The device can also handle high voltages and currents, making it ideal for a wide range of applications.

In summary, the RN2427TE85LF is an ideal transistor for a wide range of applications where a low standby power consumption is needed. It features an internal amplifier circuit and pre-bias circuit to reduce power consumption in the standby mode. The device is rated at 8 amp and can handle a maximum of 50 volts in its maximum collector-emitter voltage. The device is suitable for a wide range of applications including AC to DC converters, DC to DC converters, rectifiers, DC lighting, consumer electronics, automotive and industrial applications as an amplifier or amplifier driver and motor control applications. It is an ideal device for applications where a low standby power consumption is required.

The specific data is subject to PDF, and the above content is for reference

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