RSFML RQG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Current - Average Rectified (Io):	500mA
Voltage - Forward (Vf) (Max) @ If:	1.3V @ 500mA
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	500ns
Current - Reverse Leakage @ Vr:	5µA @ 1000V
Capacitance @ Vr, F:	4pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-219AB
Supplier Device Package:	Sub SMA
Operating Temperature - Junction:	-55°C ~ 150°C

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Reverse-biased Schottky Field-Effect Light (RSFML) rectistors are widely used in various applications, ranging from semiconductor junction diodes to RF transmissions. The major application of this device is for the control and modulation of high-frequency currents.The RSFML rectistor consists of a thin-film, insulator-insulated metallic semiconductor schottky gate, surrounded by a thin dielectric layer, which is connected to a substrate. The semiconductor material of the gate is typically a silicondoped polysilicon with a very low resistivity. This layer is sandwiched between two thin gold layers which act as the two contacts of the device. One of the layers is the anode, whilst the other is the cathode.When the device is reverse-biased, a space charge layer is formed on its gate, which prevents the current flow through the device. This layer has a very low capacitance, thereby allowing very high-frequency switching of the current. The gate capacitance allows for very efficient control of the device current and can be used for high-frequency modulation of the current. The major advantage of RSFML rectistors is their large operating temperature range, small gate capacitance and low power consumption. The device\'s low power requirement and high switching frequency makes them suitable for use in various fields such as storage and communications systems, high frequency magnetic field detectors and power electronics.The working principle behind RSFML rectistors is Coulomb blocking. When the device is reverse-biased, an electric field is established across the gate layer, thus forming the space charge layer on the gate. This space charge layer blocks the current flow and prevents the device from passing current. This blocking capability is maintained until the reverse bias reaches a certain level. The current-voltage characteristics of the RSFML rectistors can be varied by changing the gate capacitance. The device can thus be used to control the current-voltage characteristics of high frequency circuits. The gate capacitance can also be used to regulate the voltages and frequencies in these circuits, allowing them to be modulated to achieve better performance.In conclusion, RSFML rectistors are ideal devices for high-frequency circuit control, modulation and power management. Their low power consumption, wide operating temperature range and high switching frequency makes them suitable for various applications including power electronics, storage and communication systems. Furthermore, the gate capacitance allows for the controlled current-voltage characteristics, making them ideal for high-frequency modulation and regulation of high-frequency circuits.

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