| Allicdata Part #: | RSFMLHRVG-ND |
| Manufacturer Part#: |
RSFMLHRVG |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 500MA SUB SMA |
| More Detail: | Diode Standard 500mA Surface Mount Sub SMA |
| DataSheet: | RSFMLHRVG Datasheet/PDF |
| Quantity: | 1000 |
| 6000 +: | $ 0.03810 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Current - Average Rectified (Io): | 500mA |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 500mA |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 500ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
| Capacitance @ Vr, F: | 4pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | Sub SMA |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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A RSFMLHRVG (Rapid-State Melting Field-Induced Hot-Electron Recombination and Recombined-Electron Buried Field-Effect Transistor) is an power device that belongs to the category of diodes – rectifiers – single. RSFMLHRVG contains a p-type semiconductor which internally is penetrated into the buried base channel and a n-type semiconductor which internally penetrates into the buried domain channel. Thus, RSFMLHRVG consists of two different semiconductor materials. A voltage-controlled pulse feeds a positive gate-semiconductor bandgap inducing tunneling current. It further creates a constant localized voltage on the entrance channel and the subthreshold current is generated by impact ionization which causes the trapped electrons at the interface to escape.
The working principle of RSFMLHRVG is based on two advantages. Firstly, it has a low voltage rating and secondly, it has avalanche capability and peak high current conduction capacity. This combination makes it attractive for various applications including voltage regulation and power output. With a low voltage rating, RSFMLHRVG is capable of operating at lower input voltages, typically around 1.2V to 6V, and it can be used to create a low voltage output which can be used in small-signal control applications. In addition, its high peak current conduction capacity allows it to deliver higher output current while operating at low voltage. This makes it suitable for high-frequency applications such as in SMPS (switched-mode power supplies) or audio amplifications.
RSFMLHRVG also has the capability to withstand higher voltages, allowing it to be used in high-voltage applications as well, such as power supplies, motor control, and other applications. In addition to its voltage and current capabilities, RSFMLHRVG also has the benefit of high switching speeds and higher performance than standard rectifiers and high voltage diodes. All these features combined with its low cost and small size makes RSFMLHRVG an attractive choice for high power applications.
RSFMLHRVG has been found to be useful in high voltage switching and rectification applications in various industries and applications. For instance, it has been utilized in automotive electronics to reduce the amount of energy needed to charge the battery. In addition, it has been used in industrial power supplies, renewable energy sources such as solar cells, and DC-DC converters. Its low-power characteristics, along with its ability to withstand a wide range of operating voltages, makes it an ideal choice for applications that require high voltage, low power supply voltage, and high performance.
In conclusion, RSFMLHRVG is an extremely versatile device which can be used in a variety of applications. With its low voltage rating, high peak current conduction capacity and fast switching capabilities, RSFMLHRVG is an attractive choice for a wide range of applications, from small-signal control, power supplies, motor control, and renewable energy generation.
The specific data is subject to PDF, and the above content is for reference
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RSFMLHRVG Datasheet/PDF