RSM002N06T2L Discrete Semiconductor Products

RSM002N06T2L is a silicon FET with a high voltage and fast switching capability. The device is available in three different packages: RSM, RSH, and RSH-HV. It is widely used in applications ranging from power management, motor control and IGBT applications.

This device is a single N-channel enhancement-mode power MOSFET. The MOSFET\'s structure uses silicon with a highly doped n-type and a lightly doped p-type substrate. The MOSFET\'s design includes a source terminal, a drain terminal, and a gate terminal.

Working principle

The RSM002N06T2L is designed to block any electrical current through it and then allow large amounts to flow when an appropriate voltage is applied to the gate terminal. When a positive voltage is applied to the source and drain terminals (with respect to the gate) with the gate terminal connected to ground, the electric field induced by the gate induces holes in the substrate and electrons in the valence band. The holes in the substrate and electrons in the valence band form a conductive channel between the source and drain terminals, thus allowing current to flow.

The FET operates on the principle of the majority carriers, which are electrons in the n-channel and holes in the p-channel. The majority carriers are injected into the channel and accumulate at the gate region. The MOSFET operates with no biasing of the majority carriers and by controlling the gate voltage. The gate voltage can increase or decrease the number of carriers in the channel and so can control the current that flows through the channel.

Application fields

RSM002N06T2L is widely used in applications where high switching speed and high voltage is needed. It is used in motor control, power management, switch mode power supplies (SMPS), and in various other switching applications. It is also used in high voltage applications such as bridge rectifiers, HVAC systems, light dimmers, and industrial control systems.

Due to its very low on-resistance, it is very suitable for low power applications such as control circuits, audio systems, and small switching applications. This device can also be used in applications where high power output is needed, such as solar power systems, inverters, and other power conversion applications.

One of the advantages of the RSM002N06T2L is that it has a wide range of threshold voltages available, ranging from -3V to 18V. This makes it suitable for applications that need to support both low voltage and high voltage.

The RSM002N06T2L also has a very low gate charge and high switching speeds, making it suitable for fast switching applications. It also has a much lower on-resistance compared to other FETs, which makes power conversion applications more efficient.

Finally, the RSM002N06T2L has a high avalanche energy rating, which is useful for applications that require higher levels of insulation or protection from surges or transients.