Allicdata Part #: | S1JLHMHG-ND |
Manufacturer Part#: |
S1JLHMHG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A SUB SMA |
More Detail: | Diode Standard 600V 1A Surface Mount Sub SMA |
DataSheet: | S1JLHMHG Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.03640 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8µs |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The Single-Junction High-Voltage Metal-Rectifier Heterojunction (S1JLHMHG) is a highly efficient rectifier diode which is used in a wide range of applications. This type of rectifier diode is a combination of a metal-semiconductor junction and a metal-oxide junction. The metal-semiconductor junction has a high injection efficiency, which makes it highly suitable for high voltage applications. The metal-oxide junction has a low resistance, making it suitable for low voltage applications. This combination makes the S1JLHMHG an ideal solution for a wide range of applications.
For applications which require high power rectification, the S1JLHMHG is the best choice. This type of rectifier diode is able to handle high power loads and is also capable of operating at high temperatures. This makes it ideal for use in applications that demand high power operation, such as in power supply units and motor drives. The S1JLHMHG can also be used in high voltage rectification applications, such as in power plants, where the DC voltage needs to be maintained at a high level.
The working principle of the S1JLHMHG is based on the principle of heterojunction. This involves the use of a metal contact which is placed between the two layers of semiconductor material. This contact serves as a junction between the two layers, thus allowing the current to flow through it. As the current passes through the junction, it is multiplied by the characteristic impedance of the junction, resulting in a higher efficiency. The use of this type of structure makes the S1JLHMHG highly efficient and reliable.
The S1JLHMHG finds its applications mainly in high power and high voltage rectification circuits. In these circuits, the current is rectified into an AC-form of electricity, which is then supplied to the connected equipment. This makes the S1JLHMHG an ideal choice for high power applications. It is also used for rectifying low voltage signals, as it helps in maintaining the desired voltage level. In addition, the S1JLHMHG is used in amplifier circuits and is also used in digital circuits.
The S1JLHMHG is a highly efficient rectifier diode and is suitable for a wide range of applications. The use of this type of diode makes it possible to produce highly efficient and reliable rectification circuits. Furthermore, the use of heterojunction technology makes the S1JLHMHG highly efficient and reliable. The S1JLHMHG is widely used in power plants, high power and digital circuitry, making it the ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
S1JLW RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 600V 1A SO... |
S1JLWHRVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 600V 1A SO... |
S1JLHRVG | Taiwan Semic... | 0.05 $ | 6000 | DIODE GEN PURP 600V 1A SU... |
S1JL R3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLS RVG | Taiwan Semic... | -- | 1000 | DIODE GEN PURP 600V 1.2A ... |
S1JLSHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1.2A ... |
S1JL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JL RFG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JL RVG | Taiwan Semic... | -- | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
S1JLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...