Allicdata Part #: | S1JLHMTG-ND |
Manufacturer Part#: |
S1JLHMTG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A SUB SMA |
More Detail: | Diode Standard 600V 1A Surface Mount Sub SMA |
DataSheet: | S1JLHMTG Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.03640 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8µs |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The single junction low-noise high-efficiency microwave transistor technology, commonly referred to as S1JLHMTG, is a technology designed to provide high performance radio frequency (RF) power applications and low noise components.
The single junction low-noise high-efficiency microwave transistor technology is used in a variety of applications including cellular infrastructure nodes, high power RF amplifiers and passive components. The technology is also used in other communication systems such as satellite communications, Doppler radar, microwave ovens and medical imaging. The advantages of using this technology are that it is highly efficient in power conversion and provides low-noise components.
S1JLHMTG is applied mainly to rectifier diodes and comes in different types with different features. They are generally categorized by their terminal type, reverse voltage, forward current, forward voltage, reverse recovery time, capacitance, etc. These diodes are designed to provide very low forward leakage and high reverse conduction.
The working principle behind S1JLHMTG is that all of the components are fabricated in a single junction structure, which allows for a large dynamic range and improved performance. The structure is composed of two body layers, the emitter-collector layer and the base layer, which are both heavily doped to minimize noise and non-ideal behavior. This structure ensures the utmost efficiency and reduces the complexity and cost of the device.
The base layer is composed of P-type doping, which has a low threshold voltage and allows for a lower temperature operation. At the same time, the emitter-collector layer is composed of N-type doping, which results in a high forward voltage level. Both layers also provide for a self-protection mechanism, which stabilizes the rectifying process and prevents damage caused by electrostatic discharge.
S1JLHMTG has many features, such as low losses, superior performance, and low parasitic capacitance. These features make the technology ideal for high power and low noise applications. They are also cost effective, making them a suitable choice for both large and small scale systems.
The single junction low-noise high-efficiency microwave transistor technology is a reliable and cost-effective way to create high performance components and systems. It offers superior performance, low loss, and very low parasitic capacitance. This technology is used in a variety of applications, and is a great way to reduce the complexity and cost of a system.
The specific data is subject to PDF, and the above content is for reference
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