S29PL064J70BFW122 Allicdata Electronics
Allicdata Part #:

S29PL064J70BFW122-ND

Manufacturer Part#:

S29PL064J70BFW122

Price: $ 3.54
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 64M PARALLEL 48FBGA
More Detail: FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 70n...
DataSheet: S29PL064J70BFW122 datasheetS29PL064J70BFW122 Datasheet/PDF
Quantity: 1000
800 +: $ 3.21845
Stock 1000Can Ship Immediately
$ 3.54
Specifications
Series: PL-J
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)
Description

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The S29PL064J70BFW122 is a type of nonvolatile 16Mbit, SERIAL NOR Flash memory. Because of its low operating voltage, wide operating temperature range, fast page program time, and low power consumption, it is commonly used in the industrial, medical and aerospace markets, plus in embedded systems that require high performance and reliability. As with all Flash memories, this device functions by using floating-gate transistors for the storage of binary information.

The device is housed in a space-saving 9mm x 11.5mm 64-pin TBGA package, making it suitable for a wide range of applications. It offers a Read speed of up to 133 megahertz, and supports both 8-bit and 16-bit data bus widths. The device subsists off a 3.3 volt power source, and has a minimum working voltage of 1.7 volts.

The S29PL064J70BFW122 incorporates a high density 13.3 Megabits (1 Mbit x 4 banks x 16 devices) cell array with an array organization of 8192 words by 128 bits and an instruction register with maximum length of 256 bits. It also has write protection locked with a one-time programmable (OTP) WRSR registers. To create an abundant space, the device has high erase endurance (10,000 erases/cycle) and long data retention life (100 years) for stored data.

As for the device\'s operation, single-byte, multi-byte and block-erase commands are used. On the read side, single-byte reads are used, as well as random access reads such as Word-Read and Extended-Read. With its combination of small size and high data retention, the S29PL064J70BFW122 makes for an excellent choice for critical data storage applications.

The S29PL064J70BFW122 has been proven to operate in temperatures ranging between -40°C and +85°C, making it suitable for use in extreme conditions such as those experienced in transportation, aerospace and military scenarios. With its fast page cycle time of 13 microseconds and random access time of 30 microseconds, the S29PL064J70BFW122 is a good choice for applications requiring speed and reliability.

The S29PL064J70BFW122 also offers a range of protective features such as ID codes, sector protection and 24-bit device ID. Additionally, features such as auto boot-up, device reset and auto-deselect are included for the convenience of the user.

In conclusion, the S29PL064J70BFW122 is a high speed, reliable and cost-effective nonvolatile Flash memory with space-saving packaging. It is suitable for high performance, embedded applications requiring accuracy and reliability. With its extended temperature range and read speeds, plus sector protection and other additional features, it is an ideal choice for applications requiring fast and reliable access to critical data.

The specific data is subject to PDF, and the above content is for reference

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