S29PL032J70BAW120 Allicdata Electronics
Allicdata Part #:

S29PL032J70BAW120-ND

Manufacturer Part#:

S29PL032J70BAW120

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 48FBGA
More Detail: FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 70n...
DataSheet: S29PL032J70BAW120 datasheetS29PL032J70BAW120 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PL-J
Packaging: Tray 
Part Status: Last Time Buy
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)
Description

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The S29PL032J70BAW120 is a memory chip -- a type of non-volatile memory chip used in a wide range of consumer and industrial devices. It is a 32Mbit[1] CMOS non-volatile memory device with a boot block architecture, which uses a separate logical block to store its primary code. This logical block is separated from the rest of the memory by an erase block, which is designed to protect its contents from unwarranted tampering and power interruptions.

As a static RAM, the S29PL032J70BAW120 offers plenty of speed and flexibility in applications such as automotive systems, consumer electronics, and military/aerospace applications. This chip is designed with a hierarchical architecture. It has a hierarchy of two ROM planes, two EBCs (External Bus Controllers), four ROM blocks, four RAM blocks, and four OTP cells. Furthermore, both ROM and RAM block hierarchies possess read and write access features, allowing for both code and data storage. This makes it perfect for systems in which simultaneous program execution and data access is required.

Furthermore, the S29PL032J70BAW120 has several robust built-in protection mechanisms. The hardware based block protection feature, which allows users to protect specified areas of programming memory with a password, prevents malicious unauthorized access. Furthermore, the device incorporates High-endurance write protection in order to guard against inadvertent program data corruption. This important feature can be used to ensure the data stored in the chip stays the same, even in the event of power outages and other common sources of data corruption.

The working principle of the S29PL032J70BAW120 is based on a multi-plane data architecture, which allows for simultaneous programming and erasing of data. Data can be read from and written to the memory array via commands sent through the External Bus Controllers (EBCs). These commands can be used in a wide range of applications including loading code, writing to an EBC register, or erasing memory blocks. The EBCs also provide direct access to the individual plane for efficient chip initialization and data retrieval.

In conclusion, the S29PL032J70BAW120 is a highly advanced memory chip offering plenty of features and performance. It is available in multiple package sizes and is suitable for a wide range of applications including automotive and consumer electronics. Its hierarchical architecture and robust protection mechanisms make it ideal for mission-critical applications. Additionally, its multi-plane data architecture ensures fast and efficient program and data access.

The specific data is subject to PDF, and the above content is for reference

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