S29PL127J60TFI130

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The S29PL127J60TFI130 is a member of High Performance Mobile SDRAM, which belongs to the wider family of Memory products. This device is a low-power 590 megabits (Mb) mobile SDRAM, organized as 32 Meg x 32. Thanks to its advanced architecture, burst lengths of 4 and 8, fast page mode access and self refresh, the S29PL127J60TFI130 provides a high-bandwidth interface to support graphics, video, and other storage and memory intensive applications.

The S29PL127J60TFI130 is ideally suited for small form factor designs and portable applications requiring high bandwidth and exceptional performance. Its features make it an excellent choice for applications such as digital still and video cameras, portable media players, and mobile gaming consoles, as well as many others.

The S29PL127J60TFI130 has a wide operating range. It is specified to operate from -40 to +85 degrees Celsius, and can tolerate up to 1.8V on the Vccq input and a maximum 2.6V Vcc supply. The device also offers an array of advanced features such as a high data rate, low power consumption, and a low-profile package. Additionally, the device supports a burst length of 4 and 8 for fast and efficient memory access.

The S29PL127J60TFI130 is designed to offer a wide range of application fields. Thanks to its advanced architecture, it is ideally suited for applications such as digital still and video cameras, portable media players, and mobile gaming consoles, as well as others. The device also provides a high bandwidth interface that enables fast page mode access, burst lengths of 4 and 8, and self refresh.

The S29PL127J60TFI130 operates with a unique working principle. It allows memory access through a cell array called the dynamic random-access memory (DRAM). The DRAM is a two-dimensional array composed of 6-transistor (6T) cells, each storing one bit of data. DRAMS read data by activating an address line, selecting the column in which the data is stored, and then activating a row or charge pump for the required bit. Asclock cycles pass, the transistor/capacitor switches will change from WRITE to READ. This occurs when the capacitor of that cell is larger than the data currently stored in the cell.

The data stored in the S29PL127J60TFI130 is written and read by a synchronous sequence of operations. The data is first written to the dynamic random-access memory (DRAM), and then read back for processing or storage in the synchronous burst mode. Additionally, the device provides a self-refresh mode that automatically refreshes the DRAM cells periodically. This reduces power consumption and helps maintain data integrity in areas with less reliable power sources.

The S29PL127J60TFI130 is a highly advanced mobile SDRAM that offers a wide range of application fields. With its high data rate, low power consumption, and low-profile package, the device provides an excellent solution for applications such as digital still and video cameras, portable media players, and mobile gaming consoles. Moreover, its unique working principle and features enable fast page mode access and self refresh, making it an ideal choice for memory-intensive applications.

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