
Allicdata Part #: | S29PL064J65BFI120-ND |
Manufacturer Part#: |
S29PL064J65BFI120 |
Price: | $ 3.84 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 64M PARALLEL |
More Detail: | FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 65n... |
DataSheet: | ![]() |
Quantity: | 1000 |
338 +: | $ 3.49020 |
Series: | PL-J |
Part Status: | Last Time Buy |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (4M x 16) |
Write Cycle Time - Word, Page: | 65ns |
Access Time: | 65ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a fundamental component of modern technology. Essential in almost all modern electrical, computing and digital devices, from personal computers to phones and tablets, memory is responsible for the storage of all important data. In this article, we will look at the S29PL064J65BFI120 memory, its application in the field and its working principle.
The S29PL064J65BFI120 is a 64 Mb synchronous/asynchronous memory device that is part of the statistical programmable family of non-volatile flash memories. This makes it an ideal choice for a variety of applications. It is used to store code, data, and media files in applications such as IoT, HMI, automotive, audio, video, and medical. Furthermore, it is also suitable for a wide range of industrial, consumer, design and embedded applications.
The S29PL064J65BFI120 memory device is composed of a high-performance single-voltage Flash core and a management system, as well as a data protection system. This combination allows for improved system performance and efficient power management, as well as a high level of protection for data in extreme conditions. The memory device has a random access memory specification that allows for efficient access and updating of data. As it is a non-volatile memory device, it enables data to be stored even when the power is off.
The memory device has an asynchronous latency of 7 and 8 cycles and a synchronous latency of 4 and 5 cycles. It also offers a wide operating voltage range of 1.7-3.6V and can operate at up to 166MHz. The device is capable of data transfers of up to 133MB/s, making it ideal for performance-sensitive applications such as audio, graphics, and video processing.
The working principle of the S29PL064J65BFI120 memory device is simple. The device is comprised of an array of flash memory cells which are divided into sectors and blocks. When the device is powered on, the system will read the sector and block information from the memory and then load the data from the cells. When new data needs to be written, it will be written to the cells. This is done by erasing the data in the sector and then writing the new data. The new data will then be stored in the cells until it needs to be changed or the device is powered off.
The S29PL064J65BFI120 memory device offers a range of features that make it ideal for a variety of applications. Its synchronous and asynchronous unlock latency, operating voltage range and maximum operating frequency make it perfect for performance-critical applications. Moreover, its random access memory specification allows for efficient access and updating of data, while the data protection system ensures that data is safe from extreme conditions. In addition to this, the device is relatively low-cost and has a long lifespan, making it a good investment.
The S29PL064J65BFI120 memory device is thus a reliable memory solution for a range of applications, from embedded systems and industrial systems to consumer applications. Its features make it suitable for performance-sensitive applications, while its data protection system ensures data integrity. Finally, it offers a long lifespan and can be used in a variety of environments, making it a wise choice for any application.
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