S29PL127J60BAE000

Series:	PL-J
Part Status:	Last Time Buy
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	128Mb (8M x 16)
Write Cycle Time - Word, Page:	60ns
Access Time:	60ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-25°C ~ 85°C (TA)

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S29PL127J60BAE000 Application Field and Working Principle

Memory has become an increasingly important element in modern computing, and S29PL127J60BAE000 is one of the essential components in this branch. This device is usually used in industrial applications and is considered to be one of the most efficient and most reliable memories due to its many beneficial features.

Application Fields

S29PL127J60BAE000 has several different application fields. As a type of non-volatile memory, it can be used for industrial and embedded applications, providing a reliable and long-term storage for various kinds of data. It is also used in telecommunications systems, in order to store signals, program codes, and other data for communication equipment. In addition, due to its low power consumption and small size, S29PL127J60BAE000 provides an ideal solution for the development of medical equipments, and can be used for memory access control and data storage.

Working Principle

The S29PL127J60BAE000 is a Flash memory device employing a single chip CMOS process to implement a 64-bit word architecture that offers very high density memory bank features. The device is divided into 16 memory banks, each bank contains 1,024K words and each word may contain 64-bits of data. The device also offers an 8-bit wide data bus that can be used for either random or sequential data access.The device is also capable of utilizing a level shift register which offers the ability to offer greater speed than the conventional RAM in both read and write operations. This level shift register allows a degree of device isolation, which helps to maintain data consistency, as well as allowing for faster and more efficient operations.When the device is accessed through the 8 bit register, it is possible to select one of two chip enable lines. This selection will dictate the operation of the device. If the low-enable line is active, then writing will take place in the memory. If the high-enable line is active, then the device will act in a read mode and then allow for either random or sequential access.In conclusion, S29PL127J60BAE000 is a reliable and efficient non-volatile memory which is mainly used for industrial applications, including telecommunications systems and medical devices. It utilizes a single chip CMOS process to implement a 64-bit word architecture, and offers an 8-bit wide data bus for either random or sequential data access. The device also employs a level shift register, providing faster operations as well as heightened data consistency.

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