Allicdata Part #: | S5JM6G-ND |
Manufacturer Part#: |
S5J M6G |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 5A DO214AB |
More Detail: | Diode Standard 600V 5A Surface Mount DO-214AB (SMC... |
DataSheet: | S5J M6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.10774 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Introduction
The S5J M6G is a silicon-substrate unit, which is commonly used as the power diode in linear and switching power supplies. It is constructed by bonding together two vertical P and N layers in a single P-N junction. It has higher rectification ratio, compared to other general-used junction diodes. In addition, it can handle larger inverse voltage and has higher temperature capacity. Due to its high efficiency and satisfactory performance, the M6G device is widely used in applications that require higher power.
Application Field
The M6G can be used for:
- Applications that require high-power rectification, such as in AC to DC converters used in the power industry;
- High-reliability switching power supplies;
- Pulse-Width Modulation (PWM) controllers;
- Power filters in low-voltage, high-current DC systems; and
- DC-DC converters in PLCs and inverters.
Working Principle
The S5J M6G operates on the principle of a P-N junction diode. This concept is based on the fact that, when the two semiconductor layers in the diode are combined, they form a junction. A hole-electron combination is then formed in the junction and this gives rise to what is known as an electric field. The electric field will then cause a flow of electrons from the P-region to the N-region and this creates a voltage drop across the junction, known as the forward voltage drop. In other words, a current is allowed to flow through the diode only when the applied voltage is greater than the forward voltage drop.
When the external voltage is reversed so that the N-region is at a higher potential than the P-region, the electric field is reversed and the current does not flow between the two regions. This state is termed as the reverse breakdown voltage and this voltage is greater for the S5J M6G than for other types of diodes.
Conclusion
The S5J M6G is a highly efficient silicon-substrate device, which is used most commonly as a diode in applications that need to handle large current and voltage. It is typically used in AC to DC converters, High-reliability switching power supplies, PWM controllers, Power filters, and DC-DC converters. The working principle of the device is quite simple, as it operates on the concept of the P-N junction and a flow of electrons through the junction when the applied voltage is greater than the forward voltage drop.
The specific data is subject to PDF, and the above content is for reference
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