S5J M6G Allicdata Electronics
Allicdata Part #:

S5JM6G-ND

Manufacturer Part#:

S5J M6G

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 5A DO214AB
More Detail: Diode Standard 600V 5A Surface Mount DO-214AB (SMC...
DataSheet: S5J M6G datasheetS5J M6G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.10774
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Introduction

The S5J M6G is a silicon-substrate unit, which is commonly used as the power diode in linear and switching power supplies. It is constructed by bonding together two vertical P and N layers in a single P-N junction. It has higher rectification ratio, compared to other general-used junction diodes. In addition, it can handle larger inverse voltage and has higher temperature capacity. Due to its high efficiency and satisfactory performance, the M6G device is widely used in applications that require higher power.

Application Field

The M6G can be used for:

  • Applications that require high-power rectification, such as in AC to DC converters used in the power industry;
  • High-reliability switching power supplies;
  • Pulse-Width Modulation (PWM) controllers;
  • Power filters in low-voltage, high-current DC systems; and
  • DC-DC converters in PLCs and inverters.

Working Principle

The S5J M6G operates on the principle of a P-N junction diode. This concept is based on the fact that, when the two semiconductor layers in the diode are combined, they form a junction. A hole-electron combination is then formed in the junction and this gives rise to what is known as an electric field. The electric field will then cause a flow of electrons from the P-region to the N-region and this creates a voltage drop across the junction, known as the forward voltage drop. In other words, a current is allowed to flow through the diode only when the applied voltage is greater than the forward voltage drop.

When the external voltage is reversed so that the N-region is at a higher potential than the P-region, the electric field is reversed and the current does not flow between the two regions. This state is termed as the reverse breakdown voltage and this voltage is greater for the S5J M6G than for other types of diodes.

Conclusion

The S5J M6G is a highly efficient silicon-substrate device, which is used most commonly as a diode in applications that need to handle large current and voltage. It is typically used in AC to DC converters, High-reliability switching power supplies, PWM controllers, Power filters, and DC-DC converters. The working principle of the device is quite simple, as it operates on the concept of the P-N junction and a flow of electrons through the junction when the applied voltage is greater than the forward voltage drop.

The specific data is subject to PDF, and the above content is for reference

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