Allicdata Part #: | S5JV6G-ND |
Manufacturer Part#: |
S5J V6G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 5A DO214AB |
More Detail: | Diode Standard 600V 5A Surface Mount DO-214AB (SMC... |
DataSheet: | S5J V6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06682 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The S5J V6G is a single rectifier diode constructed with a Schottky-barrier structure and optimized for use in advanced portable equipment. It features one of the lowest forward voltage drops available and a low leakage current, making it suitable for applications in which power loss and prolonged battery life are desired. This device also offers fast recovery times and excellent temperature stability, allowing for efficient use and stable power levels in a wide range of temperature environments.
The most common application for the S5J V6G is to serve as a secondary rectifier in an AC to DC converter circuit. When reverse biased, the diode provides protection from voltage transients in the circuit, allowing the AC to DC converter to better regulate its output. Similarly, when forward biased, the diode provides a controlled flow of current from the input AC source, making it well suited for the demands of a switched-mode power supply (SMPS).
The S5J V6G’s working principle involves the “Schottky effect”, which states that as the voltage across a diode increases, so will its forward current. This is due to the barrier potential created by the rectifying junction, which reduces the effective distance between the anode and the cathode and allows electrons to migrate across more quickly. When the voltage across the diode exceeds the barrier potential, electrons can travel freely and the currents can be more accurately regulated.
The barrier potential energy of the S5J V6G is extremely low, which results in a low forward voltage drop. This means that less energy is lost in the form of heat when the current passes through the diode. Similarly, the leakage current of the diode is also quite low, ensuring that it does not draw any power from the circuit when not in use.
The S5J V6G also has a fast recovery time, enabling it to quickly return to its OFF-state after a period of current flow. This is important in applications where the power must be turned off quickly and accurately, as it reduces the amount of time between signal pulses to improve system accuracy and reduce power consumption. In addition, its temperature stability helps ensure that the device can handle a wide range of temperature changes without affecting its performance.
Overall, the S5J V6G is an excellent choice for those looking for a diode with low forward voltage drop, low leakage current, fast recovery time, and excellent temperature stability. By using this rectifier diode in AC to DC converter circuits, switched-mode power supplies, and other applications, engineers can achieve efficient and stable power levels with minimal power loss.
The specific data is subject to PDF, and the above content is for reference
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